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Ultra-low ionic impurity content meeting stringent electronic-grade purity requirements (Na⁺, K⁺, Ca²⁺, Mg²⁺ < 1 ppb each).
Highly uniform spherical bead morphology ensuring consistent polishing performance and minimal particle generation.
Optimized low-tortuosity macroporous structure for rapid ion exchange kinetics and reduced pressure drop in polishing columns.
Exceptional chemical stability in ultra-pure water and dilute acid/base environments typical of semiconductor ultrapure water (UPW) systems.
Pre-compacted and pre-rinsed to minimize initial rinse volume and accelerate system commissioning in critical UPW loops.
Final polishing stage in semiconductor-grade ultrapure water (UPW) production systems.
Polishing loop resin for 18.2 MΩ·cm resistivity water in advanced microelectronics fabrication facilities.
Trace metal removal in photovoltaic cell manufacturing process water circuits.
Ultrapure rinse water polishing for EUV lithography tool support systems.
| Chemical Type | Strong Acid Cation (SAC) / Strong Base Anion (SBA) Mixed Bed Resin |
| Product Form | Pre-mixed, pre-compacted, ready-to-use mixed bed resin |
| Appearance | Uniform spherical beads, dark brown (cation) and off-white (anion) — visually distinguishable in mixture |
| Functional Groups | Cation: Sulfonic acid (–SO₃H); Anion: Quaternary ammonium (–N⁺(CH₃)₃) |
| Moisture Content | 45–50% (as shipped) |
| Particle Size Range | 300–1200 μm (95% retained) |
| Temperature Limit | ≤ 50 °C continuous operation |
| Storage Conditions | 5–35 °C, sealed original packaging, avoid freezing and direct sunlight |
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
