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Ultra-low metallic impurity content (<1 ppb Na, K, Ca, Mg, Fe, Ni, Cu, Zn) for semiconductor-grade water polishing.
Highly uniform spherical bead morphology with narrow particle size distribution (600–800 μm) ensuring consistent hydraulic performance.
Optimized functional group density and crosslinking (8% DVB) for enhanced selectivity toward trace cations and improved regeneration efficiency.
Low TOC leaching (<0.5 ppb) under standard operating conditions, meeting stringent ultrapure water (UPW) specifications for advanced node fabrication.
Excellent physical and chemical stability across pH 1–14, enabling compatibility with aggressive regenerants and extended service life.
Final polishing stage in ultrapure water (UPW) systems for semiconductor wafer fabrication facilities (fabs).
Polishing loop in 300 mm and 450 mm wafer process water recirculation systems.
Cation removal in high-purity rinse water circuits for photolithography and etch tools.
Trace metal scavenging in CMP (chemical mechanical planarization) slurry makeup water systems.
Polishing resin in pharmaceutical-grade water (PW/HPW) systems requiring electronic-grade purity assurance.
| Chemical Type | Strong Acid Cation (SAC), sulfonated polystyrene-divinylbenzene |
| Product Form | Moist, gel-type spherical beads |
| Appearance | Amber, translucent, uniform spherical particles |
| Particle Size Range | 600–800 μm (95% of total) |
| Uniformity Coefficient | ≤1.3 |
| Crosslinking Degree | 8% divinylbenzene (DVB) |
| Ion Exchange Capacity (dry basis) | ≥4.8 eq/L (H⁺ form) |
| Maximum Operating Temperature | 120 °C |
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
