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Ultra-low metallic impurity content (<1 ppb Na, K, Ca, Fe, Ni, Cu)
Highly uniform spherical morphology for consistent slurry stability and polishing uniformity
Controlled particle size distribution (D50: 12–14 µm, span <1.3) optimized for CMP process control
Chemically inert in acidic and neutral slurries, ensuring compatibility with common electronic-grade additives
Batch-to-batch reproducibility certified per SEMI F63 and ISO 9001 manufacturing protocols
Chemical Mechanical Planarization (CMP) of copper interconnects in advanced logic and memory devices
Polishing of barrier layers (Ta/TaN) in sub-7 nm semiconductor fabrication
Final surface finishing of silicon carbide (SiC) power device wafers
Post-etch residue removal and surface smoothing for high-aspect-ratio TSV (Through-Silicon Via) structures
| Chemical Type | Sulfonated polystyrene-divinylbenzene copolymer |
| Product Form | Dry spherical resin beads |
| Appearance | Free-flowing white to off-white powder |
| Primary Applications | CMP slurry component for Cu, Ta, and SiC polishing |
| Key Features | Low metal ion leaching, narrow PSD, acid-stable |
| Storage Conditions | Sealed container, 5–30 °C, low humidity |
| Packaging | 5 kg vacuum-sealed aluminum-laminated bag |
| Compliance | SEMI F63, RoHS 3, REACH SVHC-free |
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
