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High dielectric constant (εr > 1,500 at 1 kHz, 25 °C) enabling miniaturized capacitor and resonator designs.
Excellent ferroelectric properties with well-defined Curie temperature (~120–130 °C) for stable polarization switching.
High chemical stability in ambient and controlled-atmosphere processing environments (e.g., O2, N2, Ar).
Low dielectric loss (tan δ < 0.002 at 1 MHz, 25 °C) ensuring high energy efficiency in RF and microwave components.
Compatible with standard thin-film deposition techniques including sputtering, PLD, and sol-gel processing.
Ferroelectric random-access memory (FeRAM) capacitor layers and gate stacks.
High-frequency multilayer ceramic capacitors (MLCCs) for automotive and 5G infrastructure.
Piezoelectric sensors and actuators in precision motion control and medical ultrasound transducers.
Substrates for epitaxial growth of complex oxide heterostructures (e.g., LSMO/BaTiO3, STO/BaTiO3).
Tunable microwave devices including phase shifters, filters, and varactors in radar and satellite communication systems.
| Chemical Type | Barium titanate (BaTiO3), perovskite-structured ceramic |
| Product Form | Polished single-crystal wafers or sintered polycrystalline substrates (standard diameters: 10–50 mm; thicknesses: 0.5–1.0 mm) |
| Appearance | Opaque white to light gray, mirror-polished surface (Ra < 0.3 nm for single-crystal); matte finish for sintered variants |
| Melting Point | ~1625 °C (decomposes above ~1450 °C under ambient pressure) |
| Primary Applications | Ferroelectric thin-film devices, capacitive sensors, tunable RF components, oxide heteroepitaxy |
| Key Features | Room-temperature ferroelectricity, tetragonal crystal symmetry (c/a > 1.01), low intrinsic leakage current density (<10−7 A/cm² @ 100 kV/cm) |
| Benefits | Enables voltage-tunable permittivity, high thermal stability up to 120 °C, compatibility with CMOS back-end-of-line (BEOL) processing |
| Regulatory Compliance | RoHS 2015/863 compliant; REACH SVHC-free; no intentional addition of lead, cadmium, or mercury |
| Common Compatible Systems | Suitability |
| Ultrahigh-vacuum (UHV) sputtering systems (e.g., AJA, Kurt J. Lesker) | Highly Recommended – Excellent adhesion and stoichiometric transfer under O2/Ar plasma conditions |
| Pulsed laser deposition (PLD) chambers (e.g., Newport, Coherent) | Highly Recommended – Minimal target degradation; enables atomically sharp heterointerfaces |
| Sol-gel spin-coating platforms (e.g., Laurell WS-400BZ-6NPP/LITE) | Recommended – Requires pre-deposition O2 annealing (600–750 °C) for full crystallization |
| Atomic layer deposition (ALD) reactors (e.g., Beneq TFS 200) | Suitable – Compatible with TiCl4/H2O and Ba(thd)2/O3 precursors after surface hydroxylation |
Q1: What is the CAS Registry Number for BaTiO3 substrate material?
A: The CAS number for barium titanate (BaTiO3) is 12047-27-7. This applies to all commercially available BaTiO3 substrates regardless of crystallinity or form.
Q2: Is BaTiO3 substrate subject to migration or leaching under humid or aqueous conditions?
A: Bulk BaTiO3 exhibits negligible ion migration or leaching below 80 °C and pH 4–10. Surface barium dissolution may occur under prolonged exposure to acidic solutions (pH < 3) or elevated temperatures (>100 °C); passivation via Al2O3 ALD capping is recommended for harsh environments.
Q3: How does BaTiO3 compare to SrTiO3 (STO) as a functional substrate for oxide electronics?
A: BaTiO3 offers strong room-temperature ferroelectricity and higher dielectric tunability, while STO is paraelectric and serves primarily as a lattice-matched, non-polar template. BaTiO3 substrates are preferred for memory and tunable devices; STO is favored for superconducting or quantum interface applications requiring zero spontaneous polarization.
Q4: Does your BaTiO3 substrate carry ISO 9001 or IATF 16949 certification for quality management?
A: Yes — all BaTiO3 substrates are manufactured under an ISO 9001:2015 certified quality management system. Automotive-grade batches comply with IATF 16949:2016 requirements, including PPAP documentation and AEC-Q200 screening upon request.
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