SiC Wafer Substrate 1-8 Inch

Features Of SiC Wafer Substrate 1-8 Inch

1. Single-crystal silicon carbide (4H-SiC or 6H-SiC) with low micropipe density (< 0.5 cm⁻²) and high crystalline uniformity.

2. Available in diameters from 1 inch to 8 inches, supporting scalable device fabrication and process compatibility across R&D and production lines.

3. Polished double-side wafers (epi-ready) with surface roughness < 0.2 nm RMS and controlled off-axis orientation (4° ± 0.5° toward [11̅20]).

4. Thermal conductivity > 330 W/m·K at room temperature — enabling superior heat dissipation for high-power electronics.

5. Chemically inert and oxidation-resistant up to 1600 °C in air — ideal for harsh-environment processing and long-term reliability.

Typical Applications Of SiC Wafer Substrate 1-8 Inch

1. Epitaxial growth platform for high-voltage, high-frequency power devices (e.g., MOSFETs, Schottky diodes, JFETs).

2. Substrate for RF GaN-on-SiC heterostructures in 5G base station amplifiers and radar systems.

3. Fabrication of radiation-hardened sensors and detectors for aerospace and nuclear instrumentation.

4. Platform for wide-bandgap optoelectronic devices including UV photodetectors and deep-UV LEDs.

5. Research-grade substrate for advanced material studies, including 2D heterostructures and quantum defect engineering.

Specifications Of SiC Wafer Substrate 1-8 Inch

Compatible Systems Of SiC Wafer Substrate 1-8 Inch

SiC Wafer Substrate 1-8 Inch – Frequently Asked Questions (FAQ)

Q1: Does SiC wafer substrate have a CAS Registry Number?

A: No — silicon carbide as a bulk crystalline wafer substrate is not assigned a CAS number; CAS 409-21-2 applies only to silicon carbide powder (non-stoichiometric, amorphous/ceramic grade), not single-crystal semiconductor wafers.

Q2: What is the typical handling protocol to avoid surface contamination or damage during processing?

A: Use Class 100 cleanroom protocols; handle exclusively with PTFE-tipped tweezers and quartz or SiC-compatible carriers; avoid ultrasonic cleaning in organic solvents — prefer RCA-1/RCA-2 followed by HF-last dip for native oxide removal.

Q3: How does SiC compare to sapphire or Si substrates for GaN epitaxy?

A: SiC offers superior lattice match (3.5% mismatch vs. GaN vs. ~13–16% for sapphire/Si), higher thermal conductivity (>3× sapphire, >10× Si), and enables vertical device architectures — resulting in lower on-resistance, higher power density, and improved reliability.

Q4: Are these wafers compliant with RoHS and REACH regulations?

A: Yes — all SiC wafers are manufactured without intentionally added RoHS-restricted substances (Pb, Cd, Hg, Cr⁶⁺, PBB, PBDE) and comply with REACH SVHC thresholds; full compliance documentation available upon request.

Q5: Is there any risk of silicon or carbon migration into epitaxial layers during high-temperature growth?

A: Negligible — single-crystal SiC substrates exhibit exceptional thermal and chemical stability; no measurable Si or C interdiffusion occurs below 1700 °C in standard MOCVD/MBE environments due to strong covalent bonding and low intrinsic diffusion coefficients.