English
Español
tiếng việt
русский
Low-foaming, high-efficiency nonionic surfactant engineered specifically for semiconductor back-end cleaning and rinse processes.
Exceptional residue-free performance with ultra-low ionic and metallic impurity content (<1 ppb Na, K, Ca, Fe, Cu).
High hydrolytic stability in deionized water and compatibility with low-pH and neutral process chemistries.
Reduces surface tension to <28 mN/m at 0.1 wt% in DI water at 25°C, enabling superior wetting of advanced packaging substrates.
Designed for high-purity manufacturing environments — manufactured and tested under ISO 9001 and ISO 14001 certified processes.
Post-CMP (Chemical Mechanical Planarization) rinse formulations for copper/low-k interconnects.
Wafer-level packaging (WLP) and fan-out wafer-level packaging (FOWLP) cleaning solutions.
Die attach prep and underfill pre-wetting steps in advanced heterogeneous integration processes.
Final rinse additives in single-wafer and batch tools to suppress watermark formation and particle redeposition.
Formulation component in low-residue, low-VOC post-etch and post-strip rinse concentrates.
| Chemical Type | Alkylphenol ethoxylate–free nonionic surfactant (branched C12–C15 alcohol ethoxylate) |
| Product Form | Pale yellow to colorless viscous liquid |
| Appearance | Clear, homogeneous liquid; no phase separation at 20–30°C |
| Active Content | 99.0–100.0 wt% (by HPLC) |
| pH (1% aqueous solution, 25°C) | 5.5–7.0 |
| Primary Applications | Semiconductor back-end cleaning, rinse enhancement, defect suppression |
| Key Features | Ultra-low ionic contamination, low foaming, high DI-water solubility, non-reducing |
| Regulatory Compliance | REACH registered; RoHS compliant; no SVHCs on current candidate list |
| Common Compatible Systems | Suitability |
| Deionized (DI) water-based rinse systems | Highly Recommended – Fully miscible; maintains clarity and stability up to 50°C |
| Dilute organic acid (e.g., acetic, citric) rinse chemistries | Recommended – Stable for ≥72 h at 25°C; no precipitation or cloud point shift |
| Standard semiconductor tool platforms (TEL, SCREEN, Lam Research) | Highly Recommended – Validated in spin-rinse, megasonic, and spray-rinse modules |
| Non-ionic additive blends (e.g., with glycol ethers or siloxane surfactants) | Suitable – Compatible when total nonionic loading ≤ 2.0 wt%; requires formulation screening |
Q1: What is the CAS Registry Number for Dow ECOSURF LF-20?
A: The CAS Registry Number is 128852-46-2.
Q2: What is the typical usage concentration in semiconductor rinse applications?
A: Recommended dosage ranges from 0.02 to 0.15 wt% in final rinse solution, optimized per tool type and substrate topography.
Q3: How does ECOSURF LF-20 compare to ECOSURF EH-9 in back-end processes?
A: LF-20 offers lower foam, higher thermal/chemical stability, and stricter metal impurity control (<1 ppb vs. <10 ppb) versus EH-9 — making it suitable for advanced nodes (≤7 nm) and high-aspect-ratio packaging.
Q4: Is ECOSURF LF-20 compliant with SEMI S2 and S8 safety standards?
A: Yes — full SEMI S2 hazard assessment and S8 ergonomics evaluation are available upon request under NDA; product meets all applicable occupational exposure limits (OEL <1 mg/m³).
Q5: Does ECOSURF LF-20 exhibit extractables or leachables in contact with polymeric encapsulants or mold compounds?
A: No significant extractables observed under standard JEDEC MSL-1 conditions (30°C/60% RH, 168 h); validated via LC-MS analysis per IEC 60750-2.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
Have a Questions? Call Us:
Add:
Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
