English
Español
tiếng việt
русский
Ultra-low metallic impurity profile (<1 ppb Na, K, Fe, Cu, Ni) ensuring minimal particle generation and device contamination.
Precisely controlled etch rate uniformity (±3% across 8-inch wafers) for high-yield TFT-LCD and OLED display manufacturing.
Non-oxidizing, chloride-free formulation to prevent ITO redeposition and interlayer corrosion in multilayer thin-film stacks.
Stable performance over extended bath life (>100 hours at 45°C) with real-time pH and conductivity monitoring compatibility.
Low surface tension and high wetting capability for uniform coverage on patterned ITO substrates with aspect ratios >1:5.
Etching of indium tin oxide (ITO) anode layers in AMOLED and microLED display backplanes.
Pattern definition of transparent conductive electrodes in touch sensor modules (e.g., GFF, GF, and metal mesh hybrids).
Removal of residual ITO during photolithographic lift-off processes in flexible printed electronics fabrication.
Pre-bond cleaning and selective ITO trimming in wafer-level packaging of optoelectronic sensors.
High-precision patterning of ITO-coated glass and PET substrates for automotive HUD and smart window applications.
| Chemical Type | Acidic aqueous solution (proprietary organic acid blend) |
| Product Form | Liquid concentrate (ready-to-dilute) |
| Appearance | Clear, colorless to pale yellow liquid |
| pH (1:10 dilution, 25°C) | 1.8–2.2 |
| Density (25°C) | 1.03–1.06 g/cm³ |
| Primary Applications | Wet etching of sputtered ITO films (100–1000 nm thickness) |
| Key Features | Halogen-free, low residue, non-volatile, compatible with photoresist stripping |
| Regulatory Compliance | REACH SVHC compliant; RoHS 2015/863 Annex II compliant; no listed TSCA or PFAS substances |
| Common Compatible Systems | Suitability |
| SEMITOOL / Lam Research spin-rinse developers | Highly Recommended – Optimized for spray and immersion modes with full process control integration |
| SCREEN FSI wet processing platforms (e.g., ACT series) | Highly Recommended – Validated for inline temperature and flow stability up to 55°C |
| Modutek ultrasonic etch tanks | Recommended – Requires optional filtration upgrade (0.1 µm PTFE) for extended bath life |
| Manual dip tanks with PVC/PFA lining | Suitable – Compatible with standard lab-grade polypropylene and fluoropolymer materials |
Q1: What is the CAS Registry Number for this etchant?
A: As a proprietary multi-component formulation, this product does not have a single CAS number; individual constituents are disclosed under confidentiality agreements and SDS Section 3 per REACH requirements.
Q2: What is the recommended working concentration and typical etch rate?
A: Dilute 1:9 with deionized water (10% v/v); etch rate is 8–12 nm/sec for 150-nm ITO at 45°C, adjustable via temperature and agitation control.
Q3: How does this etchant compare to traditional HCl/HNO₃-based ITO etchants?
A: It eliminates hazardous fuming, reduces ITO undercut by >40%, prevents Sn⁴⁺ precipitation, and enables direct integration with resist strippers without intermediate rinsing.
Q4: Is there any risk of leachable metals or organics migrating into adjacent dielectric layers during etching?
A: No detectable migration observed in cross-sectional EDX analysis after 2× over-etch; validated for use with SiO₂, SiNₓ, and Al₂O₃ barrier layers under standard process conditions.
Q5: Does this product require special handling or regulatory documentation for international shipping?
A: Classified as Non-Hazardous for transport (UN3082 not applicable); shipped with full SDS, IMDS declaration, and conflict minerals statement upon request.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
Have a Questions? Call Us:
Add:
Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
