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Ultra-low ionic residue (<1.0 ppm Na⁺, <0.5 ppm Cl⁻) to prevent electrochemical migration in microelectronics.
Non-halogenated, non-amine formulation ensuring compatibility with sensitive photoresists and low-k dielectrics.
Controlled volatility (bp 168–172°C) enabling precise residue-free drying without thermal stress.
High solvency for common polymer residues including polyimide, BCB, and acrylic-based spin-on polymers.
Batch-to-batch consistency certified per SEMI F57 and ISO 9001 manufacturing protocols.
Post-etch and post-ash removal of polymer residues from advanced logic and memory wafers (≤5 nm nodes).
Cleaning of MEMS and RF packaging substrates prior to wafer-level bonding or underfill dispensing.
Residue mitigation during RDL (Redistribution Layer) and fan-out wafer-level packaging (FOWLP) processes.
Pre-metal deposition cleaning to eliminate organic contamination on Cu/low-k interconnect stacks.
Tool maintenance cleaning for plasma etch chambers, CVD reactors, and lithography track modules.
| Chemical Type | Proprietary non-aqueous polar aprotic solvent blend |
| Product Form | Clear, colorless liquid |
| Appearance | Transparent, homogeneous, no phase separation |
| Boiling Point Range | 168–172°C at 760 mmHg |
| Primary Applications | Polymer residue removal in semiconductor front-end and advanced packaging |
| Key Features | Non-corrosive to Al, Cu, TiN, and SiO₂; non-swelling to PBO and polyimide films |
| Benefits | Enables single-step cleaning without rinse/dry cycles; reduces particle generation (<0.05 particles/cm² after cleaning) |
| Regulatory Compliance | REACH SVHC-free, RoHS 2015/863 compliant, no listed PFAS substances |
| Common Compatible Systems | Suitability |
| Single-wafer spray cleaning tools (e.g., Tokyo Electron ACT series) | Highly Recommended – Fully validated for nozzle integrity and uniformity control |
| Batch immersion systems with N₂ sparging (e.g., SCREEN Dainippon SSW) | Recommended – Requires temperature stabilization at 45 ± 2°C for optimal kinetics |
| Supercritical CO₂-assisted cleaning platforms | Suitable – Compatible as co-solvent; no precipitation or phase instability observed |
| Spin-rinse dryers (SRDs) with IPA vapor dry capability | Highly Recommended – Enables seamless integration into standard BEOL cleaning sequences |
Q1: What is the CAS Registry Number for this cleaner?
A: This is a proprietary multi-component formulation; individual CAS numbers are confidential per trade secret protection. Full compositional disclosure is available under signed NDA and complies with TSCA pre-manufacture notification requirements.
Q2: What is the recommended process concentration and dwell time?
A: Use undiluted at 40–50°C with 60–120 seconds dwell time for most polymer residues; no dilution required. For ultra-thin films (<100 nm), reduce to 45°C and 45 seconds to minimize interfacial stress.
Q3: How does it compare to conventional NMP-based cleaners in terms of safety and performance?
A: Unlike NMP (CAS 872-50-4), this cleaner has no reproductive toxicity classification (OECD TG 422 negative), lower vapor pressure (0.12 mmHg at 20°C vs. 0.35 mmHg), and achieves equivalent or superior residue removal on fluorinated polyimides without post-clean oxidation.
Q4: Is extraction testing data available for leachables in high-aspect-ratio structures?
A: Yes — ICP-MS verified leachable profiles show <0.03 ppb metal extraction (Cu, Al, Ti) from 10:1 AR trenches after 120 s exposure; full report available upon request with material qualification agreement.
Q5: Does it meet JEDEC J-STD-033 moisture sensitivity level (MSL) compatibility requirements for cleaned components?
A: Yes — validated per J-STD-033D Annex B: no moisture absorption acceleration observed; cleaned packages maintain original MSL rating when stored per IPC/JEDEC standards.
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