Ultra-high purity (≥99.999% v/v) with stringent control of moisture, air, and particulate contaminants.
Exceptional dielectric strength—over 2.5× that of air at atmospheric pressure—enabling compact high-voltage equipment design.
Chemically inert and thermally stable up to 500 °C under non-arc conditions, ensuring process reliability in semiconductor etching and chamber cleaning.
Non-toxic, non-flammable, and odorless—supports safe handling in controlled cleanroom and fab environments.
Consistent batch-to-batch reproducibility certified via GC-TCD/FID and FTIR analysis per SEMI C37 and ASTM D2472 standards.
Plasma etching of silicon, silicon dioxide, and silicon nitride layers in advanced logic and memory device fabrication.
In-situ chamber cleaning for CVD, PVD, and ALD tools to remove residual metal oxides and fluorinated deposits.
Dielectric gas in high-voltage gas-insulated switchgear (GIS) and circuit breakers for power distribution infrastructure supporting semiconductor fabs.
Carrier and dopant gas in ion implantation systems requiring precise flow stability and minimal background interference.
Reference standard in mass spectrometry calibration and gas chromatography detector testing for electron-capture detection (ECD).
| Chemical Type | Inorganic fluorinated compound |
| Product Form | Compressed liquefied gas (cylinders or bulk supply) |
| Appearance | Colorless, odorless gas at ambient conditions |
| Melting Point | −50.8 °C |
| Boiling Point | −64.0 °C |
| Primary Applications | Semiconductor plasma etching, chamber cleaning, high-voltage insulation |
| Key Features | High dielectric strength, low global warming potential (GWP) relative to alternatives like PFCs, excellent plasma dissociation characteristics |
| Regulatory Compliance | SEMI C37-0321, ASTM D2472, ISO 8573-1 Class 1 (particulates), Class 2 (moisture), Class 5 (oil) |
| Common Compatible Systems | Suitability |
| Applied Materials Centris® Etch Systems | Highly Recommended – Validated for SiO₂/SiN etch uniformity and low residue performance |
| Lam Research Kiyo® and Exelan® Platforms | Highly Recommended – Optimized for SF₆-based chamber clean recipes with sub-ppb metal contamination control |
| Hitachi High-Tech CGS Series GIS Equipment | Recommended – Certified for dielectric integrity and arc-quenching efficiency per IEC 62271-203 |
| Shimadzu GCMS-QP2020NX with ECD Detector | Suitable – Used as calibration standard for halogenated compound sensitivity verification |
Q1: What is the CAS Registry Number for electronic-grade SF₆?
A: The CAS Registry Number for sulfur hexafluoride is 2551-62-4. All electronic-grade batches are traceable to this identifier with full CoA documentation.
Q2: How does SF₆ consumption compare to alternative etchant gases such as NF₃ or CF₄ in 300mm wafer processing?
A: SF₆ typically requires 20–35% lower volumetric flow than NF₃ for equivalent silicon etch rates under identical RF power and pressure conditions, reducing overall gas usage and abatement load.
Q3: Is SF₆ compatible with stainless steel and nickel-plated delivery systems used in ultra-high-purity gas lines?
A: Yes—SF₆ shows no corrosion or leaching interaction with electropolished SS-316L or nickel-coated components when moisture content remains below 1 ppmv; compatibility confirmed per SEMI F57.
Q4: Does your electronic-grade SF₆ meet EU F-Gas Regulation (EU) No 517/2014 reporting requirements?
A: Yes—each cylinder includes GWP-weighted mass declaration (GWP = 23,500), batch-specific leakage risk assessment, and full chain-of-custody documentation aligned with Article 10 reporting obligations.
Q5: Can SF₆ be recovered and recycled from tool exhaust streams using standard abatement technologies?
A: Yes—thermal and plasma abatement systems achieve >95% decomposition efficiency; recovered fluorine byproducts (e.g., HF, SiF₄) are neutralized, and unreacted SF₆ may be purified via cryogenic distillation for reuse per ISO 14040 LCA guidelines.
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