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High-resolution negative-tone imaging capability with sub-10 nm feature definition in electron beam lithography.
Excellent thermal stability up to 1000 °C in inert atmosphere, enabling high-temperature etch and lift-off processes.
Low outgassing profile suitable for ultra-high vacuum (UHV) and electron microscopy applications.
Water-developable after exposure, eliminating need for organic solvents and enhancing process safety.
Consistent batch-to-batch reproducibility certified per ISO 9001 manufacturing controls.
Nanofabrication of quantum devices, including superconducting qubits and single-electron transistors.
Maskless direct-write lithography for research-scale photonic crystal and plasmonic nanostructure patterning.
Hard mask formation for high-aspect-ratio silicon etching in MEMS and NEMS device fabrication.
Electron-beam resist in transmission electron microscopy (TEM) sample preparation workflows.
Substrate passivation layer in hybrid organic–inorganic optoelectronic integration processes.
| Chemical Type | Hydrogen Silsesquioxane (HSQ) based inorganic polymer precursor |
| Product Form | 6 wt% solution in methyl isobutyl ketone (MIBK) |
| Appearance | Clear, colorless to pale yellow liquid |
| Viscosity (25 °C) | 4.2 – 4.8 cP |
| Primary Applications | Electron beam lithography, UV nanoimprint, hard mask, nanoscale etch barrier |
| Key Features | High silicon content (~50 wt%), radiation-induced crosslinking, post-bake conversion to SiO₂-like network |
| Benefits | Superior etch resistance vs. organic resists; minimal line-edge roughness (LER); no carbon residue after plasma etch |
| Regulatory Compliance | REACH compliant; RoHS 3 (2015/863/EU) compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| JEOL JSM/JSW series e-beam writers (e.g., JSM-7900F, JSW-7000F) | Highly Recommended – Optimized exposure dose and focus parameters documented in application note AN-HSQ-06 |
| Canon FPA-3030i5a stepper (248 nm DUV) | Recommended – Requires optimized PAB/PEB and anti-reflective coating (ARC) stack |
| EVG® 620 NT nanoimprint lithography system | Suitable – Compatible with quartz and silicon stamps; requires low-pressure imprint and controlled demolding |
| Applied Materials Centura® platform (RIE etch modules) | Highly Recommended – Demonstrated selectivity >12:1 vs. Si in SF₆/O₂ plasma |
Q1: What is the CAS Registry Number for EM Resist HSQ 6%?
A: The primary CAS number for hydrogen silsesquioxane (HSQ) resin base is 38124-97-3; the formulated product EM Resist HSQ 6% carries proprietary formulation identifier EM-HSQ-06-001 and is supplied with full SDS under this designation.
Q2: What is the recommended spin-coating thickness range and corresponding spin speed for 6% HSQ?
A: For 30–50 nm final cured film thickness, spin at 3000–5000 rpm for 45 seconds on standard silicon wafers; thickness scales predictably per manufacturer’s spin curve (see Technical Bulletin TB-HSQ-06-Rev4).
Q3: How does EM Resist HSQ 6% compare to XR-1541 or ZEP-520A in terms of resolution and sensitivity?
A: HSQ offers superior resolution (<5 nm half-pitch demonstrated) but lower sensitivity (typical e-beam dose: 1500–3000 μC/cm²) versus ZEP-520A (~50 μC/cm²); it provides higher etch resistance and zero carbon residue—unlike organic resists.
Q4: Is EM Resist HSQ 6% compliant with FDA 21 CFR for indirect food contact applications?
A: No—EM Resist HSQ 6% is not intended or certified for food-contact use. It is designed exclusively for micro/nanofabrication and industrial R&D; residual monomers and solvent traces preclude food-grade compliance.
Q5: Does HSQ exhibit measurable migration or extractables when used as a thin-film barrier on biomedical substrates?
A: Under physiological conditions (37 °C, pH 7.4 PBS), fully cured HSQ films (>20 nm thick, 900 °C N₂ anneal) show no detectable silicon leaching (<0.1 ppb by ICP-MS) over 14-day immersion per ISO 10993-12 extraction testing protocol.
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E-mail: wangxingqiang@ericwchem.com
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