GaN-FS-C-U-C100 Gallium Nitride Substrate

Features Of GaN-FS-C-U-C100 Gallium Nitride Substrate

1. Ultra-low dislocation density (<1 × 10⁶ cm⁻²) enabling high-power and high-frequency device performance.

2. Free-standing (FS) crystal structure with minimal wafer bow (<10 µm) and excellent surface flatness (Ra < 0.2 nm).

3. Carbon-doped (C-doped) n-type conductivity control for precise carrier concentration tuning (1–5 × 10¹⁸ cm⁻³).

4. Chemical-mechanical polished (CMP) double-side finished surface compatible with advanced epitaxial growth processes.

5. High thermal conductivity (>130 W/m·K) and exceptional chemical inertness in harsh processing environments.

Typical Applications Of GaN-FS-C-U-C100 Gallium Nitride Substrate

1. High-electron-mobility transistors (HEMTs) for 5G RF power amplifiers and base station infrastructure.

2. Laser diodes (LDs) and micro-LED arrays for next-generation displays and AR/VR systems.

3. Power electronics modules in electric vehicles (EVs), onboard chargers, and industrial inverters.

4. UV-C optoelectronic devices including germicidal LEDs and photodetectors.

5. Space-qualified radiation-hardened semiconductor components for satellite communication systems.

Specifications Of GaN-FS-C-U-C100 Gallium Nitride Substrate

Compatible Systems Of GaN-FS-C-U-C100 Gallium Nitride Substrate

GaN-FS-C-U-C100 Gallium Nitride Substrate – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for GaN-FS-C-U-C100?

A: Gallium nitride has CAS No. 25617-97-4; this specific free-standing, carbon-doped substrate variant does not carry a unique CAS number as it is a crystalline solid material defined by structural and doping specifications rather than molecular composition.

Q2: Is GaN-FS-C-U-C100 intended for direct use in end-product devices or solely as an epitaxial platform?

A: It is exclusively designed as a high-quality epitaxial substrate — not a consumable chemical reagent. It serves as the foundational wafer for subsequent thin-film deposition (e.g., AlGaN/GaN HEMT stacks) and is never dissolved, dosed, or incorporated as a bulk additive.

Q3: How does GaN-FS-C-U-C100 differ from sapphire- or SiC-based GaN templates?

A: Unlike heteroepitaxial templates, GaN-FS-C-U-C100 enables true homoepitaxy — eliminating lattice mismatch and thermal expansion coefficient differences. This yields superior crystal quality, higher breakdown voltage, and improved thermal management versus sapphire (Al₂O₃) or silicon carbide (SiC) alternatives.

Q4: Are there any known leaching or elemental migration concerns during high-temperature epitaxy?

A: No measurable gallium or nitrogen migration occurs below 1100 °C in standard MOCVD/MBE environments. Carbon dopant remains substitutional and thermally stable; independent ICP-MS analysis of post-growth reactor residues confirms no detectable Ga or C contamination beyond instrument detection limits (≤0.1 ppb).

Q5: Does this substrate meet ISO 14644-1 Class 5 cleanroom handling requirements for semiconductor fabrication?

A: Yes — wafers are packaged in certified ISO Class 5 (Class 100) FOUPs, undergo final megasonic cleaning per SEMI F57 standards, and are verified via particle counting (≤10 particles ≥0.3 µm per cm²) prior to shipment.