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Highly ordered perovskite crystal structure with minimal lattice defects and low dislocation density.
Excellent ferroelectric, piezoelectric, and dielectric properties at room temperature and above Curie point (~120 °C).
Optical transparency in the visible to near-infrared range (400–2500 nm), enabling use in electro-optic devices.
Chemically stable under standard cleanroom handling conditions; resistant to mild aqueous and organic solvents.
Available in precise orientations (e.g., (001), (110), (111)) with surface finish down to <0.2 nm RMS roughness.
Ferroelectric random-access memory (FeRAM) and non-volatile logic device research.
Heteroepitaxial growth platform for complex oxide thin films (e.g., LSMO, LCO, STO).
Electro-optic modulators and tunable photonic integrated circuits.
Piezoelectric micro-electromechanical systems (piezo-MEMS) sensors and actuators.
Model system for fundamental studies of domain dynamics, phase transitions, and strain coupling in perovskites.
| Chemical Type | Barium titanate (BaTiO₃), ultra-high purity (>99.998% metal basis) |
| Product Form | Single-crystal wafer substrate (polished, double-side polished optional) |
| Appearance | Transparent, colorless to pale yellow cubic crystals; mirror-like surface |
| Melting Point | ~1625 °C (decomposes before full melting; peritectic decomposition ~1460 °C) |
| Primary Applications | Research-grade epitaxial growth, ferroelectric device prototyping, optical modulation |
| Key Features | Perovskite symmetry, tetragonal phase at RT, Curie temperature ≈ 120 °C |
| Benefits | Low thermal expansion mismatch with common oxide films; high dielectric constant (εᵣ > 1000 at 1 kHz) |
| Regulatory Compliance | RoHS-compliant; no REACH SVHCs above threshold; SDS available upon request |
| Common Compatible Systems | Suitability |
| Pulsed Laser Deposition (PLD) | Highly Recommended – Excellent stoichiometric transfer and epitaxial registry |
| Molecular Beam Epitaxy (MBE) | Recommended – Requires optimized oxygen partial pressure and substrate heating |
| Sputtering (RF/Magnetron) | Suitable – Compatible with oxide target sputtering; post-annealing often required |
| Atomic Layer Deposition (ALD) | Recommended – Effective for nucleation layers (e.g., TiO₂, Al₂O₃); low-temperature process compatible |
Q1: What is the CAS Registry Number for BaTiO₃?
A: The CAS Number for barium titanate is 12047-27-7.
Q2: Is BaTiO₃ substrate suitable for direct contact with biological or food-contact systems?
A: No — BaTiO₃ single crystals are intended for research and electronic device fabrication only; they are not certified for biomedical implantation or food-contact applications per FDA/EFSA guidelines.
Q3: How does BaTiO₃ compare to SrTiO₃ (STO) as a substrate for oxide heterostructures?
A: BaTiO₃ offers intrinsic ferroelectricity and higher dielectric tunability than non-ferroelectric STO, but STO provides superior lattice match for many transition-metal oxides and greater thermal/chemical stability during high-temperature growth.
Q4: Are there leaching or ion migration concerns when BaTiO₃ substrates are exposed to humid or acidic environments?
A: Under ambient humidity, surface hydroxylation may occur; prolonged exposure to pH <4 solutions can lead to selective barium leaching. For device integration, encapsulation or capping layers are recommended in corrosive processing environments.
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