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Ultra-wide bandgap (~6.2 eV) enabling deep-ultraviolet (DUV) optoelectronic device operation.
Exceptional thermal conductivity (>280 W/m·K at room temperature) for high-power and high-frequency device heat dissipation.
High electrical resistivity (>10¹¹ Ω·cm) and low dielectric loss, ideal for RF and microwave substrates.
Chemical inertness and excellent resistance to oxidation up to 1000 °C in air.
Low lattice mismatch with GaN (<2%) and AlGaN, enabling high-quality heteroepitaxial growth.
Deep-ultraviolet light-emitting diodes (DUV-LEDs) and laser diodes (DUV-LDs) for disinfection and sensing.
High-electron-mobility transistors (HEMTs) operating at millimeter-wave and THz frequencies.
Heteroepitaxial templates for high-performance AlGaN-based UV photodetectors and solar-blind detectors.
Substrates for high-power RF amplifiers in 5G/6G base station infrastructure and satellite communications.
Platform for quantum photonics devices requiring low phonon scattering and high thermal stability.
| Chemical Type | Aluminum Nitride (AlN), single-crystal |
| Product Form | Polished wafer (double-side polished, optional backside roughening) |
| Crystal Orientation | (0001) c-plane; off-cut options available (e.g., 0.5° toward m-plane) |
| Dimensions | Ø10 mm to Ø50.8 mm (2-inch); thickness: 350–500 µm standard |
| Surface Roughness (Ra) | < 0.2 nm (epi-ready surface) |
| Melting Point | > 2200 °C (decomposes before melting under atmospheric pressure) |
| Primary Applications | DUV optoelectronics, high-frequency power electronics, epitaxial template |
| Regulatory Compliance | RoHS 2015/863/EU compliant; REACH SVHC-free (as declared) |
| Common Compatible Systems | Suitability |
| MOCVD (Metalorganic Chemical Vapor Deposition) | Highly Recommended – Stable under high-temperature NH₃/H₂ atmospheres; minimal decomposition or surface nitridation |
| Molecular Beam Epitaxy (MBE) | Highly Recommended – Compatible with ultra-high vacuum (UHV) conditions and reactive metal fluxes (Al, Ga) |
| RF Sputtering & Pulsed Laser Deposition (PLD) | Recommended – Resists plasma-induced damage when properly biased and cooled |
| Wafer Bonding Platforms (e.g., Smart Cut™, Direct Bonding) | Suitable – Requires surface activation (O₂ plasma or wet chemical treatment) for reliable bonding strength |
Q1: What is the CAS Registry Number for aluminum nitride?
A: The CAS Number for aluminum nitride is 24304-00-5.
Q2: Is AlN substrate subject to leaching or ion migration under device operating conditions?
A: No significant ion migration or leaching occurs under standard semiconductor processing and operational conditions (≤300 °C, non-aqueous environments); AlN is highly stable in dry etch plasmas and inert annealing atmospheres.
Q3: How does single-crystal AlN compare to polycrystalline AlN or sapphire substrates for DUV-LEDs?
A: Single-crystal AlN offers superior crystal quality, lower threading dislocation density (<10⁴ cm⁻² vs. >10⁸ cm⁻² on sapphire), higher thermal conductivity, and reduced strain-induced defects—resulting in higher external quantum efficiency (EQE) and longer device lifetime.
Q4: Does this substrate comply with ISO 14001 environmental management requirements?
A: While the substrate itself is a material product (not a process), its manufacturing follows ISO 14001-certified production protocols; full compliance documentation is available upon request for qualified customers.
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E-mail: wangxingqiang@ericwchem.com
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