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High-resolution positive-tone imaging with sub-micron resolution capability (≤ 0.8 µm line/space).
Optimized for broadband (g/h/i-line) and deep-UV (248 nm) exposure systems.
Excellent adhesion to silicon, silicon dioxide, metal (Al, Cu), and low-k dielectric substrates.
Low outgassing profile suitable for vacuum-compatible lithography processes.
Stable shelf life (>12 months at 5–10 °C under inert atmosphere).
MEMS and microfluidic device fabrication requiring high aspect ratio patterning.
Advanced packaging lithography, including redistribution layer (RDL) and fan-out wafer-level packaging (FOWLP).
Semiconductor front-end-of-line (FEOL) and back-end-of-line (BEOL) interconnect patterning.
Flexible electronics manufacturing on polyimide and PET substrates.
Optoelectronic component patterning, such as VCSEL and photodetector arrays.
| Chemical Type | Novolac resin-based positive photoresist with diazonaphthoquinone (DNQ) sensitizer |
| Product Form | Liquid solution in proprietary PGMEA-based solvent blend |
| Appearance | Clear, amber-colored, particle-free liquid |
| Viscosity (23 °C) | 2.1 – 2.4 cP (measured per ASTM D445) |
| Primary Applications | Thin-film semiconductor, MEMS, advanced packaging, and optoelectronics lithography |
| Key Features | High photospeed (12–18 mJ/cm² @ i-line), low standing wave effect, minimal swelling during development |
| Benefits | Improved process window, reduced post-exposure bake sensitivity, consistent CD control across wafers |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500/750 Series Steppers | Highly Recommended – Validated for i-line and KrF exposure with standard focus/exposure matrix |
| Canon FPA-3000 i-Line Scanners | Highly Recommended – Optimized process recipes available upon request |
| Tokyo Electron CLEAN TRACK ACT series (e.g., ACT 12, ACT 13) | Recommended – Compatible with standard dispense, bake, and develop modules |
| SVGL Micrascan III Stepper | Suitable – Requires minor optimization of PAB and PEB temperature profiles |
Q1: What is the CAS Registry Number for HD-8820 Photoresist?
A: HD-8820 is a proprietary formulated product; individual components have CAS numbers (e.g., DNQ: 119-40-4; novolac resin: variable), but the final mixture is not assigned a single CAS number per IUPAC and regulatory convention.
Q2: What is the typical spin-coating thickness range and corresponding recommended spin speed?
A: At 23 °C, target thicknesses range from 0.6 µm (4500 rpm) to 2.2 µm (1800 rpm) on 200 mm wafers; full thickness vs. speed correlation data available in Technical Bulletin TB-HD8820-03.
Q3: How does HD-8820 compare to HD-8810 and HD-8830 in terms of resolution and thermal stability?
A: HD-8820 offers balanced resolution (≤ 0.8 µm) and thermal stability (up to 130 °C PEB); HD-8810 prioritizes higher photospeed (>25 mJ/cm²) with slightly lower resolution (≥ 1.2 µm), while HD-8830 delivers enhanced thermal resistance (up to 150 °C) and improved etch selectivity at the cost of moderate photospeed reduction.
Q4: Is HD-8820 compliant with USP <87> and <88> for extractables/leachables testing in medical device applications?
A: HD-8820 is not certified for direct biomedical implantation use; however, it meets ISO 10993-5 cytotoxicity screening when fully cured and processed, and extractables profiles are available upon NDA for qualifying medical microdevice applications.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
