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High-resolution patterning capability with sub-micron resolution (≥0.8 µm line/space) under standard i-line (365 nm) exposure.
Excellent thermal stability up to 130 °C, enabling robust post-exposure bake (PEB) and hard bake processes.
Optimized adhesion to silicon, SiO₂, and metal substrates without requiring additional adhesion promoters.
Low outgassing profile suitable for vacuum-compatible lithography tools and cleanroom environments (Class 100/ISO 5).
Consistent film uniformity (<±3% thickness variation across 200 mm wafers) with spin-coating at 2000–4000 rpm.
Microelectromechanical systems (MEMS) fabrication requiring high-aspect-ratio resist profiles.
Semiconductor packaging lithography, including redistribution layer (RDL) and bump patterning.
Flexible printed circuit (FPC) and rigid-flex interconnect manufacturing.
Optoelectronic device patterning, such as LED and sensor die-level processing.
Research & development in advanced microfabrication labs and university cleanrooms.
| Chemical Type | Positive-tone novolac-diazonaphthoquinone (DNQ) photoresist |
| Product Form | Liquid concentrate (ready-to-use), supplied in amber HDPE bottles |
| Appearance | Clear, pale yellow viscous liquid, free of visible particles or gels |
| Viscosity (25 °C) | 28–32 cP (measured per ASTM D445) |
| Specific Gravity (25 °C) | 1.06–1.09 g/cm³ |
| Primary Applications | i-line (365 nm) photolithography for mid-volume semiconductor and MEMS production |
| Key Features | High sensitivity (~40–60 mJ/cm²), low standing wave effect, minimal swelling during development |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no intentionally added PFAS |
| Common Compatible Systems | Suitability |
| Canon FPA-3030i5a Stepper | Highly Recommended – Validated for full-field exposure at 365 nm with <±2% CD uniformity |
| SVGL MicraStep MSA 100 | Recommended – Requires minor focus offset adjustment; achieves ≥0.9 µm resolution |
| Headway EC300 Spin Coater | Highly Recommended – Optimized dispense and spin parameters pre-qualified |
| Tokyo Electron (TEL) CLEAN TRACK ACT 12 | Suitable – Compatible with standard PAB/PEB/DEV modules; process recipe available upon request |
Q1: What is the CAS Registry Number for RFJ-210B Photoresist?
A: RFJ-210B is a proprietary formulation; individual components are disclosed under NDA. The bulk product is assigned CAS No. 2277472-89-1 for regulatory tracking and SDS alignment.
Q2: What is the recommended coating thickness and corresponding spin speed range?
A: Target thickness: 1.2–1.8 µm (after soft bake). Achieved via spin coating at 2500–3500 rpm for 30 seconds on 200 mm wafers; exact speed depends on substrate geometry and ambient humidity.
Q3: How does RFJ-210B compare to RFJ-210A in terms of resolution and process latitude?
A: RFJ-210B offers ~15% higher resolution (0.8 µm vs. 0.95 µm) and extended depth-of-focus (+12%) due to refined polymer molecular weight distribution and DNQ loading optimization—ideal for tighter CD control in RDL applications.
Q4: Is RFJ-210B compliant with food-contact or medical device regulations (e.g., USP Class VI, ISO 10993)?
A: No. RFJ-210B is not intended for direct food contact or implantable medical devices. It is designed for industrial microfabrication only. Residual monomer extraction data and biocompatibility testing are not performed.
Q5: Does RFJ-210B exhibit measurable extractables or leachables under standard wafer cleaning conditions (e.g., SC1, DHF)?
A: Residual resist removal is complete after standard piranha (H₂SO₄:H₂O₂) or oxygen plasma ashing. Trace organic extractables (<5 ng/cm²) may be detected by GC-MS after aggressive HF-based cleans; no metallic leachables observed per ICP-MS analysis.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
