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High-resolution patterning capability with sub-micron resolution (≤ 0.8 µm line/space) under standard i-line exposure.
Excellent thermal stability up to 140 °C, enabling robust post-exposure bake and etch process compatibility.
Low outgassing profile suitable for vacuum-based lithography tools and sensitive optical components.
Optimized adhesion to silicon, SiO₂, and metal substrates without requiring additional primers.
Environmentally compliant formulation—free of halogenated solvents and restricted phthalates per RoHS 3 and REACH SVHC criteria.
Front-end semiconductor manufacturing: gate-level and interconnect patterning in CMOS logic devices.
MEMS fabrication: high-aspect-ratio microstructure definition for sensors and actuators.
Advanced packaging: redistribution layer (RDL) and through-silicon via (TSV) lithography.
Micro-LED display backplane patterning on glass and silicon carbide substrates.
Research & development applications in nanofabrication labs requiring reproducible, low-defect resist performance.
| Chemical Type | Novolac resin–based positive photoresist with diazonaphthoquinone (DNQ) sensitizer |
| Product Form | Liquid solution in standardized PGMEA solvent |
| Appearance | Clear, pale yellow, homogeneous liquid |
| Solids Content | 22–24 wt% (certified per batch) |
| Viscosity (23 °C) | 2.1–2.4 cP (measured at 100 rpm, Brookfield LVDV-II+) |
| Primary Applications | i-line (365 nm) photolithography for 0.35–0.13 µm technology nodes |
| Key Features | High photospeed (~40–60 mJ/cm²), low standing wave effect, minimal swelling during development |
| Regulatory Compliance | RoHS 3 Directive (2015/863/EU), REACH SVHC-free, non-REACH registered substance (exempt per Annex V) |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / i-line steppers | Highly Recommended – Fully qualified with standard focus/exposure matrix and alignment protocols |
| Tokyo Electron (TEL) CLEAN TRACK ACT series | Highly Recommended – Optimized dispense, bake, and develop recipes available |
| Canon FPA-3000 i-line scanners | Recommended – Requires minor exposure dose calibration; supports full field uniformity |
| SVGL MicraScan III | Suitable – Functional with standard mask aligner settings; recommended for R&D use only |
Q1: What is the CAS Registry Number for RFJ-230 Photoresist?
A: RFJ-230 Photoresist is a proprietary multi-component formulation and does not carry a single CAS number; individual major constituents are listed in the Safety Data Sheet (SDS Section 3) upon request.
Q2: What is the typical coating thickness and spin speed range for optimal performance?
A: At 22–24 wt% solids, target thicknesses of 1.0–1.4 µm are achieved at 2500–3500 rpm (30 sec) on bare Si wafers; thickness uniformity is ±2.5% across 200 mm wafers.
Q3: How does RFJ-230 compare to RFJ-220 and RFJ-240 in terms of resolution and process window?
A: RFJ-230 offers a balanced trade-off: higher resolution than RFJ-220 (optimized for cost-sensitive mature nodes) and wider process latitude (focus/exposure) than RFJ-240 (ultra-high-resolution variant); ideal for high-yield 0.18–0.13 µm production.
Q4: Is RFJ-230 certified for use in medical device manufacturing (e.g., ISO 10993 or USP Class VI)?
A: RFJ-230 is not intended for direct patient-contact applications and has not undergone ISO 10993 biological evaluation; however, it meets USP Class VI extractables limits when tested per ASTM F619 using simulated physiological extracts.
Q5: Are there known migration or leaching concerns when RFJ-230 residues remain after plasma ashing?
A: Residual carbonaceous species post-ashing are negligible (< 0.05 ng/cm²) and non-volatile under ambient conditions; no detectable leaching observed in aqueous extraction studies (ICP-MS detection limit < 0.1 ppq).
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
