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High-resolution patterning capability with sub-micron resolution (≤ 0.8 µm line/space) under standard i-line (365 nm) exposure.
Excellent thermal stability up to 140 °C, enabling robust post-exposure bake (PEB) and etch resistance.
Low outgassing profile suitable for vacuum-based lithography processes and MEMS fabrication environments.
Optimized adhesion to silicon, SiO₂, and metal substrates (e.g., Al, Cr, TiW) without mandatory HMDS priming.
Environmentally enhanced formulation with reduced aromatic solvent content, supporting safer handling and lower VOC emissions.
Microelectromechanical systems (MEMS) device fabrication requiring high aspect ratio structures.
Semiconductor packaging photomasks and redistribution layer (RDL) patterning.
Flexible printed circuit board (FPCB) inner-layer imaging and solder mask definition.
Microfluidic chip fabrication on glass and polymer substrates (e.g., PMMA, PC).
Optoelectronic component manufacturing including VCSEL and photodetector array patterning.
| Chemical Type | Positive-tone novolac-diazonaphthoquinone (DNQ) photoresist |
| Product Form | Liquid solution in proprietary PGMEA/ethyl lactate solvent blend |
| Appearance | Clear, pale yellow liquid; free of visible particles or gels |
| Viscosity (25 °C) | 22–26 cP (measured at 25 °C per ASTM D445) |
| Primary Applications | i-line (365 nm) lithography for mid-volume semiconductor, MEMS, and advanced packaging |
| Key Features | High sensitivity (~40–60 mJ/cm²), low standing wave effect, good sidewall profile control |
| Benefits | Reduced process variability, extended shelf life (≥12 months unopened at 5–25 °C), compatibility with aqueous alkaline developers |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no intentionally added PFAS |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / i-line steppers | Highly Recommended – Validated for full-field exposure uniformity and CD control |
| Karlsruhe Institute of Technology (KIT) Maskless Lithography System (ML2) | Recommended – Requires minor focus calibration; supports grayscale patterning |
| TOK TOKA™ Spray Coater & Bake Track (SCB-3000 series) | Highly Recommended – Optimized spin-coating parameters pre-loaded in system library |
| Technics OAI UV Aligner Series (Model 300-UVi) | Suitable – Manual alignment supported; recommended for R&D prototyping |
Q1: What is the CAS Registry Number for RFJ-260 Photoresist?
A: RFJ-260 Photoresist is a proprietary multi-component formulation; individual CAS numbers are assigned only to major constituents (e.g., DNQ derivative: CAS 24933-87-7; novolac resin base: CAS 9003-35-4). Full composition is protected under trade secret provisions.
Q2: What is the typical coating thickness and corresponding spin speed range for RFJ-260?
A: At 3000 rpm on silicon wafers, RFJ-260 yields ~1.2 µm dry film thickness (±5%); thickness ranges from 0.7 µm (5000 rpm) to 2.1 µm (1500 rpm), following standard quadratic spin-coating models.
Q3: How does RFJ-260 compare to RFJ-250 in terms of resolution and process latitude?
A: RFJ-260 offers improved resolution (0.8 µm vs. 1.2 µm for RFJ-250) and wider exposure latitude (EL ±12% vs. ±8%), achieved via refined DNQ concentration and optimized dissolution inhibitor balance—ideal for tighter CD control in advanced packaging.
Q4: Is RFJ-260 compliant with EU food contact regulations (EC No. 10/2011) or US FDA 21 CFR for indirect food contact applications?
A: No—RFJ-260 is not certified for food-contact use. It is formulated exclusively for industrial microfabrication. Migration testing data is not generated, and the product carries explicit “Not for Food Use” labeling per GHS Annex VI.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
