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High quantum yield photoacid generation under 365 nm (i-line) and 248 nm (KrF) exposure.
Excellent thermal stability—decomposition onset above 180 °C ensures robust pre-bake process window.
Low volatility and minimal outgassing, supporting high-resolution lithography in vacuum-compatible tools.
Compatible with standard alkaline-developable chemically amplified resists (CARs) based on poly(p-hydroxystyrene) and acetal-protected polymers.
Consistent lot-to-lot performance validated via HPLC and acid-generation efficiency testing.
Advanced i-line (365 nm) photolithography for MEMS and power device patterning.
KrF excimer laser (248 nm) deep-UV resist formulations for semiconductor front-end-of-line (FEOL) layers.
High-sensitivity negative-tone CARs used in advanced packaging lithography (e.g., fan-out wafer-level packaging).
Multi-layer resist systems requiring controlled acid diffusion length and low PAG bleed.
Photoresist formulations for display manufacturing, including OLED TFT backplane patterning.
| Chemical Type | Sulfonium salt (triphenylsulfonium perfluorobutanesulfonate) |
| Product Form | White to off-white crystalline powder |
| Appearance | Free-flowing crystalline solid |
| Melting Point | 172–176 °C (DSC, onset) |
| Primary Applications | Chemically amplified photoresists for i-line and KrF lithography |
| Key Features | High acid strength (H₀ ≈ –11), low diffusion coefficient, strong UV absorption at 248 nm |
| Benefits | Enables high resolution (≤ 0.35 µm L/S), improved line-edge roughness (LER), and reduced post-exposure bake sensitivity |
| Regulatory Compliance | REACH registered; RoHS 2011/65/EU compliant; no SVHCs above threshold per current candidate list |
| Common Compatible Systems | Suitability |
| Poly(p-hydroxystyrene)-based resins (e.g., Novolac-free CAR platforms) | Highly Recommended – Demonstrates optimal deprotection kinetics and contrast |
| Acetal-protected acrylic resins (e.g., t-BOC, THP, or tetrahydropyranyl derivatives) | Recommended – Requires optimized PAG loading (2–5 wt% relative to resin) |
| Standard i-line positive-tone resists (e.g., Shipley S1800 series derivatives) | Suitable – Effective at 3–4 wt% loading; compatible with standard process conditions |
| KrF 248 nm resist platforms (e.g., JSR APEX-E analogs) | Highly Recommended – Validated for sub-200 nm feature patterning with high DOF |
Q1: What is the CAS Registry Number for San-Apro CPI-100B?
A: The CAS number is 133797-54-7 (triphenylsulfonium perfluorobutanesulfonate).
Q2: What is the recommended loading range in resist formulations?
A: Typical loading is 2–5 wt% relative to solid resin content; optimal performance is observed at 3.5 wt% for KrF resists and 4.0 wt% for i-line systems.
Q3: How does CPI-100B compare to triphenylsulfonium triflate (TST) in terms of acid strength and thermal latency?
A: CPI-100B generates a stronger acid (perfluorobutanesulfonic acid, pKa ≈ –12) than triflic acid (pKa ≈ –14) but offers superior thermal latency due to steric and electronic stabilization of the sulfonium cation—delaying thermal decomposition by >20 °C versus TST.
Q4: Is CPI-100B compliant with food contact or medical device regulations?
A: CPI-100B is not intended for direct food contact or implantable medical devices; it is formulated and qualified exclusively for semiconductor and microfabrication applications. No FDA or ISO 10993 certification is claimed.
Q5: Has migration or extractable impurity profiling been performed under lithographic processing conditions?
A: Yes—IC-MS and TOF-SIMS analysis confirms <1 ppm volatile sulfur species and negligible metal ion leaching (<0.1 ppb Na/K/Ca/Fe) after standard PEB (110 °C, 60 s) and development, meeting SEMI S2/S8 requirements.
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E-mail: wangxingqiang@ericwchem.com
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