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High thermal stability with controlled acid release onset at 100–115 °C, enabling precise lithographic patterning.
Low volatility and minimal sublimation below 90 °C, ensuring excellent shelf life and handling safety.
High purity (>99.5%) with ultra-low metal ion content (<10 ppb Na, K, Fe), critical for semiconductor-grade resists.
Excellent solubility in common photoresist casting solvents including PGMEA, EL, and cyclohexanone.
Non-hygroscopic solid form, eliminating moisture-related decomposition during storage or formulation.
Chemically amplified resists (CARs) for advanced EUV and DUV lithography (13.5 nm and 193 nm).
Post-apply bake (PAB) and post-exposure bake (PEB) sensitive resist layers in semiconductor front-end-of-line (FEOL) processes.
Advanced packaging photolithography, including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) patterning.
High-resolution microelectromechanical systems (MEMS) and sensor device fabrication.
Multi-layer resist systems requiring orthogonal thermal activation without premature crosslinking.
| Chemical Type | Sulfonium salt (triphenylsulfonium nonaflate derivative) |
| Product Form | White to off-white crystalline powder |
| Appearance | Free-flowing, homogeneous crystals |
| Melting Point | 108–112 °C (DSC, 10 °C/min) |
| Primary Applications | Thermal acid generator for 193 nm and EUV chemically amplified resists |
| Key Features | Controlled acid generation onset; low diffusion; high quantum yield upon exposure |
| Benefits | Improved resolution, line-edge roughness (LER) control, and process window robustness |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no listed Prop 65 substances |
| Common Compatible Systems | Suitability |
| Acrylic-based CAR resins (e.g., PHS-co-MAA derivatives) | Highly Recommended – Excellent compatibility and dissolution contrast |
| Novolac resin systems (for i-line/g-line resists) | Recommended – Requires optimized PEB temperature profile |
| Polyhydroxystyrene (PHS) blended with lactone additives | Highly Recommended – Synergistic deprotection kinetics |
| EB-curable base resins (e.g., epoxy-acrylate hybrids) | Suitable – Effective under thermal-only activation; limited UV sensitivity |
Q1: What is the CAS Registry Number for San-Apro TA-100FG?
A: The CAS Registry Number is 2278412-97-3.
Q2: What is the recommended loading range in standard 193 nm CAR formulations?
A: Typical loading is 1.5–5.0 wt% relative to total solids; optimal performance is observed at 2.5–3.5 wt% for balanced sensitivity and resolution.
Q3: How does TA-100FG compare to triphenylsulfonium triflate (TPT) in terms of acid strength and thermal latency?
A: TA-100FG generates a weaker, more diffusible nonafluorobutanesulfonic acid (H-NfBS), offering superior thermal latency and reduced acid migration versus TPT’s stronger triflic acid—critical for sub-20 nm feature control.
Q4: Is TA-100FG compliant with semiconductor industry migration testing standards (e.g., IEC 60112, JEDEC JESD22-A108)?
A: Yes—TA-100FG demonstrates <0.5 ppm extractables in standardized solvent extraction tests (PGMEA, DI water, 80 °C, 2 h) per JEDEC JESD22-A108H protocol, confirming low ionic contamination risk.
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