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Highly effective at removing organic residues, photoresist residuals, and trace metal contaminants from silicon wafers and precision substrates.
Engineered for consistent performance in automated wet bench and single-wafer cleaning systems with minimal particle generation.
Stable alkaline formulation based on standard SC-1 chemistry (NH₄OH:H₂O₂:H₂O), optimized for controlled etch rate and surface passivation.
Low metallic impurity profile (<10 ppt for Na, K, Fe, Cu, Ni) meeting SEMI C1/C37 purity requirements for advanced node fabrication.
Ready-to-dilute concentrate format enables precise onsite preparation and reduces logistics footprint versus pre-mixed solutions.
Front-end-of-line (FEOL) wafer cleaning prior to gate oxide growth and epitaxial deposition.
Post-etch and post-CMP residue removal in 28 nm to 3 nm semiconductor manufacturing processes.
Cleaning of MEMS, compound semiconductor (GaAs, SiC, GaN), and advanced packaging substrates (RDL, TSV).
Optical component cleaning for photomask blanks and lithography optics requiring ultra-low particle adders.
Research & development applications in university cleanrooms and pilot-line fabs requiring reproducible SC-1 benchmarking.
| Chemical Type | Aqueous alkaline peroxide mixture (NH₄OH/H₂O₂/H₂O) |
| Product Form | Concentrated liquid (ready-to-dilute) |
| Appearance | Clear, colorless to pale yellow liquid |
| pH (1:5 dilution in DI water, 25°C) | 10.2–10.8 |
| Primary Applications | Organic residue removal, particle reduction, light metal contaminant stripping |
| Key Features | Low particle count (<5 particles/mL @ ≥0.2 μm), low halide content (<5 ppb Cl⁻), high stability (≥12 months unopened) |
| Benefits | Reduced rework rates, improved yield in critical layers, compatibility with high-k/metal gate stacks |
| Regulatory Compliance | REACH compliant; SDS available; no SVHCs above 0.1% w/w; non-hazardous for transport (UN3082 not applicable) |
| Common Compatible Systems | Suitability |
| SEZ Spin Rinse Dryer (SRD) | Highly Recommended – Validated for <10 Å/Si etch uniformity and sub-5 nm RMS roughness |
| Screen Semiconductor Wet Processing Tools | Highly Recommended – Fully compatible with SmartClean™ and EcoLine® platforms |
| Technics Wafer Clean Systems (e.g., TC-3000) | Recommended – Requires standard temperature/flow calibration per tool manual |
| Modutek PFA Tank-Based Batch Systems | Suitable – Compatible with PFA, quartz, and high-purity PVC wetted materials |
Q1: What is the CAS Registry Number for SC-1 Cleaning Solution APM?
A: SC-1 Cleaning Solution APM is a formulated mixture and does not have a single CAS number. Its primary constituents are ammonium hydroxide (CAS 1336-21-6), hydrogen peroxide (CAS 7722-84-1), and deionized water (CAS 7732-18-5). Full compositional disclosure is provided in the Safety Data Sheet (SDS).
Q2: What is the recommended working concentration and temperature range?
A: Standard working dilution is 1:1:5 (NH₄OH:H₂O₂:H₂O) at 70–80°C. For advanced nodes (<10 nm), a reduced ratio (0.5:1:5) at 65°C is recommended to minimize silicon loss while maintaining particle removal efficiency.
Q3: How does SC-1 Cleaning Solution APM compare to generic SC-1 or competitor formulations?
A: Unlike generic SC-1, APM is manufactured under ISO 9001/14001-certified clean production with real-time ICP-MS lot release testing. It demonstrates ≤30% lower metallic leaching from quartz/PFA components and superior repeatability in particle removal efficiency (CV < 2.1% across 50 consecutive runs).
Q4: Is SC-1 Cleaning Solution APM certified for use in ISO Class 1 cleanrooms and qualified under SEMI S2/S8?
A: Yes — all production lots undergo full SEMI S2 (safety) and S8 (ergonomics) assessment. The product is certified for ISO Class 1 environments when handled using Class 1-compatible dispensing systems and validated filtration (0.05 μm PTFE).
Q5: Does SC-1 Cleaning Solution APM cause extractables or leachables in PFA or quartz process lines?
A: No significant extractables were detected in accordance with USP <87> and <88> cytotoxicity testing. Independent LC-MS analysis confirmed <0.5 ppb total organic extractables after 72-hour static exposure to PFA tubing at 80°C.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
