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Ultra-high purity (≥99.999% / 5N) with stringent control of trace metals (≤10 ppt each for Na, K, Fe, Cu, Ni, Cr, Zn, Al) and anions (Cl⁻, SO₄²⁻, NO₃⁻ ≤ 50 ppt).
Low non-volatile residue (<0.1 mg/100 mL after evaporation at 105°C), critical for defect-free photolithography and wafer cleaning.
Consistent batch-to-batch reproducibility certified via GC-FID, Karl Fischer titration, and ICP-MS analysis per SEMI C37 and C42 standards.
Manufactured and packaged under ISO Class 4 (Class 10) cleanroom conditions in fluorinated ethylene propylene (FEP) bottles with PTFE-lined caps.
Stabilized formulation with proprietary antioxidant system to prevent peroxide formation during long-term storage.
Final rinse solvent in photomask and silicon wafer cleaning processes prior to lithography and thin-film deposition.
Carrier solvent for photoresist formulations requiring low particulate and ultra-low ionic contamination.
Component in advanced etch residue removal solutions for copper/low-k interconnect cleaning.
Pre-deposition surface conditioning agent for ALD and CVD precursors to enhance film uniformity and adhesion.
Reference standard solvent in mass spectrometry (MS) calibration and trace contaminant analysis for semiconductor process monitoring.
| Chemical Type | Isopropyl Alcohol (2-Propanol), Ultra-High Purity Grade |
| Product Form | Clear, colorless liquid |
| Appearance | Transparent, free of haze, particles, or phase separation |
| Boiling Point | 82.6°C (at 760 mmHg) |
| Water Content (KF) | ≤10 ppm (w/w) |
| Non-Volatile Residue | ≤0.1 mg/100 mL |
| Primary Applications | Semiconductor wafer cleaning, photomask processing, MS reagent, photoresist diluent |
| Regulatory Compliance | SEMI C37-1117, SEMI C42-0218, RoHS 3 (2015/863/EU), REACH SVHC-free |
| Common Compatible Systems | Suitability |
| Single-Wafer Spin Rinse Dryer (SRD) | Highly Recommended – Optimized for low particle generation and rapid drying kinetics |
| Batch Wafer Cleaning Systems (e.g., SSEC, Modutek) | Recommended – Requires inline filtration (≤0.05 µm) and temperature control (20–25°C) |
| Photomask Cleaning Tools (e.g., Dainippon Screen MCD series) | Highly Recommended – Validated for sub-22 nm mask node compatibility |
| GC-MS and LC-MS Analytical Platforms | Suitable – Certified as matrix-matched reagent for trace metal and organic impurity quantification |
Q1: What is the CAS Number for Semiconductor Raw Material MS Reagent IPA?
A: The CAS Registry Number is 67-63-0. Each production lot undergoes independent CAS-verified identity confirmation via FTIR and NMR spectroscopy.
Q2: What is the recommended usage volume per wafer for front-end-of-line (FEOL) cleaning?
A: Typical consumption is 150–300 mL per 300 mm wafer in spin-rinse applications. Actual volume depends on tool configuration, rotation speed, and dwell time—validated SOPs are provided with every shipment.
Q3: How does MS Reagent IPA differ from standard electronic-grade IPA?
A: MS Reagent IPA features tighter controls on volatile organic impurities (VOCs), lower residual metals (sub-ppt vs. sub-ppq detection limits), and additional certification for mass spectrometry use—including blank-corrected background ion profiles per ASTM E2912.
Q4: Is this product compliant with USP <846> and ICH Q5C for extractables/leachables studies?
A: Yes. It is qualified per USP <846> for solvent suitability in extractables testing and supports ICH Q5C stability-indicating methods. Certificate of Analysis includes migration data from FEP and HDPE contact studies at 40°C/75% RH for 30 days.
Q5: Does it require special handling for peroxide formation risk?
A: No. This grade contains a proprietary stabilizer system and is tested for hydroperoxides (<0.1 ppm) at release and every 6 months thereafter. Shelf life is 24 months unopened under nitrogen blanket and ambient storage (15–25°C).
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E-mail: wangxingqiang@ericwchem.com
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