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Ultra-low ionic residue for minimal metal contamination in critical semiconductor cleaning processes.
Exceptional wetting and penetrating capability on hydrophobic silicon and low-k dielectric surfaces.
Thermally stable up to 120 °C, maintaining performance during high-temperature rinse and drying steps.
Non-foaming formulation compatible with megasonic and spray-based wafer cleaning equipment.
Readily biodegradable under OECD 301F conditions, supporting sustainable fab operations.
Post-etch residue removal for advanced logic and memory devices (≤5 nm node).
Photoresist stripper additive for enhanced sidewall cleaning and pattern fidelity.
Pre-diffusion cleaning of SiC and GaN wafers prior to epitaxial growth.
Particle lift-off in CMP post-clean formulations for copper and cobalt interconnects.
Low-surface-tension rinse aid in single-wafer spin-rinse-dry (SRD) tools.
| Chemical Type | Nonionic fluorosurfactant blend (perfluoroalkyl ether carboxylate derivative) |
| Product Form | Aqueous concentrate (30 wt% active) |
| Appearance | Clear, colorless to pale yellow liquid |
| pH (1% aqueous solution, 25 °C) | 6.8–7.2 |
| Primary Applications | Wafer surface conditioning, residue solubilization, particle dispersion |
| Key Features | Low volatility, non-volatile residue <0.05 ppm, halogen-free |
| Benefits | Reduces defect density (≤0.01 cm⁻²), enables sub-10 nm feature cleaning |
| Regulatory Compliance | REACH SVHC-free, RoHS 2015/863 compliant, no California Prop 65 listed substances |
| Common Compatible Systems | Suitability |
| DI Water-based megasonic cleaning baths | Highly Recommended – No precipitation or film formation; maintains conductivity <1 μS/cm |
| Standard photoresist strippers (e.g., NMP/PGMEA blends) | Recommended – Stable miscibility at ≤5 vol%; enhances residue dissolution without viscosity increase |
| Commercial CMP slurries (SiO₂ and CeO₂ types) | Suitable – Improves slurry stability and particle repulsion; no impact on zeta potential |
| Plasma ashing post-clean rinse solutions | Highly Recommended – Prevents water-spotting and organic redeposition after O₂ plasma exposure |
Q1: What is the CAS Registry Number for DF-123?
A: The CAS number for DF-123 Semiconductor Surfactant is 2278943-18-7.
Q2: What is the recommended working concentration range?
A: Typical use concentration is 0.05–0.5 vol% in DI water or process-compatible solvents; optimal dosage is validated per tool and substrate via SPC-controlled defect monitoring.
Q3: How does DF-123 compare to conventional alkylphenol ethoxylates (APEOs) in semiconductor applications?
A: DF-123 contains zero APEOs or EO/PO block polymers—eliminating risk of non-volatile residue, metal chelation, and EU-restricted metabolites (e.g., NP, NPEO) while delivering superior low-surface-tension performance (<18 mN/m at 0.1 wt%).
Q4: Is DF-123 subject to migration or leaching from process tools into wafers?
A: No measurable migration occurs: DF-123 has negligible vapor pressure (<10⁻⁸ mmHg at 25 °C) and does not adsorb onto stainless steel or quartz wetted parts; TOF-SIMS analysis shows no detectable signal (LOD <10¹² atoms/cm²) on processed wafers.
Q5: Does DF-123 require special handling or storage conditions?
A: Store at 5–30 °C in original sealed container; avoid prolonged UV exposure. No special PPE beyond standard cleanroom gloves and safety glasses is required—no skin sensitization or acute toxicity observed per OECD 404/406 testing.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
