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Reactive anchoring group enables covalent bonding to semiconductor surfaces, ensuring exceptional stability in aqueous dispersions.
Low-volatility, non-ionic architecture minimizes foaming and supports high-solids formulation without compromising rheology.
Thermally stable up to 180 °C, maintaining emulsification integrity during wafer cleaning and post-deposition processing steps.
Engineered for ultra-low metal ion content (<1 ppm Na, K, Ca), meeting stringent requirements for advanced node semiconductor manufacturing.
Hydrolytically stable under neutral-to-mildly alkaline conditions (pH 6.5–9.0), enabling compatibility with common CMP and etch rinse chemistries.
Stabilization of nano-sized ceria and silica slurries for chemical mechanical planarization (CMP) formulations.
Surface functionalization of quantum dot dispersions used in display-grade photolithography resists.
Emulsification and dispersion of photoresist additives, including dissolution inhibitors and adhesion promoters.
Carrier medium for metal-organic precursors in atomic layer deposition (ALD) precursor delivery systems.
Stabilizer for conductive polymer dispersions in printed semiconductor interconnect inks.
| Chemical Type | Reactive non-ionic surfactant with silane-based anchoring moiety |
| Product Form | Clear, viscous liquid |
| Appearance | Pale yellow to colorless, homogeneous liquid |
| Active Content | ≥ 95.0 wt% (by GC) |
| Primary Applications | Semiconductor slurry stabilization, surface-functionalized nanodispersions, low-residue process additives |
| Key Features | Reactive anchoring, low extractables, ultra-low metals, hydrolytic stability |
| Benefits | Reduced particle agglomeration, improved shelf life, minimized defect generation, enhanced process repeatability |
| Regulatory Compliance | REACH registered; RoHS 2 compliant; no SVHCs listed in current candidate list |
| Common Compatible Systems | Suitability |
| Aqueous ceria-based CMP slurries (pH 7–9) | Highly Recommended – Provides long-term colloidal stability with <0.5% viscosity drift over 6 months |
| Alkaline photoresist developer blends | Recommended – Maintains emulsion integrity without interfering with developer kinetics |
| Water-based conductive ink carriers (PEDOT:PSS, Ag nanowire) | Suitable – Enhances particle suspension; may require minor pH adjustment for optimal performance |
| Organosilicon precursor solutions (e.g., TEOS, MTMS) | Highly Recommended – Enables controlled hydrolysis and uniform surface grafting |
Q1: What is the CAS Registry Number for TN AT-900?
A: The CAS Registry Number for TN AT-900 is 2485203-87-1.
Q2: What is the typical usage concentration range in semiconductor slurries?
A: Recommended dosage is 0.2–1.5 wt% relative to total slurry mass, depending on particle size, surface area, and ionic strength; optimization via zeta potential titration is advised.
Q3: How does TN AT-900 differ from conventional non-reactive emulsifiers like Triton™ X-100 or Brij™ series?
A: Unlike passive steric stabilizers, TN AT-900 forms hydrolytically stable covalent bonds with oxide surfaces (e.g., SiO₂, Al₂O₃, CeO₂), eliminating desorption risk during rinsing and reducing post-process residue by >90% versus non-reactive analogues.
Q4: Is TN AT-900 compliant with SEMI S2/S8 safety standards and eligible for use in Class 1 cleanrooms?
A: Yes — certified per SEMI S2-1712 (safety) and SEMI S8-1115 (cleanroom compatibility); verified particulate generation <10 particles/m³ (≥0.1 µm) under ISO Class 1 airflow conditions.
Q5: Does TN AT-900 exhibit measurable migration or leaching in final wafers after thermal curing at 200 °C?
A: No detectable migration or leaching observed per ICP-MS analysis (detection limit: 0.05 ppb) following standard BEOL cure cycles; covalently bound fraction exceeds 99.2% as confirmed by XPS depth profiling.
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