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Enables void-free, bottom-up copper electrodeposition in high-aspect-ratio microvias (≥10:1) without dendritic growth or seam formation.
Delivers exceptional throwing power and uniform current distribution across complex PCB topographies, including fine-pitch HDI substrates.
Stable performance over extended bath life (>6 months under controlled operating conditions) with minimal additive decomposition.
Compatible with standard acid copper sulfate electrolytes and requires no special anode materials or filtration upgrades.
Low metal impurity content (<1 ppm total heavy metals), ensuring high-purity copper deposits suitable for RF and high-speed digital applications.
High-Density Interconnect (HDI) printed circuit boards for smartphones, wearables, and 5G infrastructure.
Advanced packaging substrates including ABF (Ajinomoto Build-up Film) and silicon interposers.
Multilayer rigid-flex and ultra-thin flex circuits used in automotive ADAS and medical imaging systems.
Embedded passive component substrates requiring planarized copper vias with <±5% thickness variation.
Advanced semiconductor test sockets and burn-in carriers demanding high-reliability copper fill integrity.
| Chemical Type | Proprietary blend of suppressors, accelerators, and levelers (non-PFAS) |
| Product Form | Liquid concentrate (aqueous solution) |
| Appearance | Clear to slightly hazy, amber-colored liquid |
| pH (as supplied) | 4.2 – 4.8 (at 25°C) |
| Density (25°C) | 1.08 – 1.12 g/cm³ |
| Primary Applications | Electrochemical via filling in acidic copper plating baths |
| Key Features | Bottom-up fill mechanism, low foaming, non-volatile organic components |
| Regulatory Compliance | REACH SVHC-free, RoHS 3 compliant, no listed California Prop 65 substances |
| Common Compatible Systems | Suitability |
| Atotech CopperStrat® VFS | Highly Recommended – Optimized co-performance with standard process control protocols |
| MacDermid Enthone CuFlash® VF | Recommended – Requires minor bath conditioning; validated up to 50 kL throughput |
| Uyemura CUPROTECT® VIA-FILL | Suitable – Compatible with existing bath maintenance schedules; verify accelerator ratio |
| In-house acid copper formulations (H₂SO₄/CuSO₄/HCl) | Highly Recommended – Broad compatibility with 40–220 g/L Cu²⁺ and 50–100 g/L H₂SO₄ |
Q1: What is the CAS Registry Number for this additive?
A: This is a proprietary multi-component formulation; individual CAS numbers are not assigned to the blended product. Full component disclosure is available under NDA upon request.
Q2: What is the typical working concentration range in the plating bath?
A: Standard dosage is 0.5–2.0 mL/L, adjusted dynamically based on via geometry, current density (1.5–3.0 A/dm²), and bath temperature (22–26°C).
Q3: How does it differ from conventional copper leveling additives?
A: Unlike general-purpose levelers, this additive is engineered specifically for superconformal bottom-up fill via synergistic suppressor-accelerator kinetics—enabling complete void elimination without overplating or necking.
Q4: Is it subject to migration or leaching in finished PCB assemblies under thermal cycling?
A: No measurable organic residue migration occurs after standard post-plate baking (120°C/30 min) and solder reflow (peak 260°C). Copper deposit integrity meets IPC-9708 requirements for intermetallic stability.
Q5: Does it meet UL recognition or IEC 61249-2-21 requirements for halogen-free electronics?
A: Yes—certified halogen-free per IEC 61249-2-21 (Br < 900 ppm, Cl < 900 ppm, total halogens < 1500 ppm); UL File E517430 is active for material recognition.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
