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Ultra-low ionic residue for minimal metallic contamination in critical semiconductor cleaning processes.
Exceptional wetting and surface tension reduction (<28 mN/m at 0.1 wt% in DI water, 25°C).
Thermally stable up to 180°C, supporting high-temperature rinse and drying steps.
Non-foaming formulation optimized for immersion, spray, and megasonic cleaning equipment.
Halogen-free and ROHS-compliant, meeting stringent environmental and process safety requirements.
Pre-deposition wafer cleaning prior to epitaxial growth or thin-film deposition.
Post-CMP (Chemical Mechanical Polishing) residue removal for copper and low-k dielectrics.
Photoresist stripping aid in aqueous-based strippers for advanced node lithography.
Particle removal during front-end-of-line (FEOL) wet bench processing.
Surface conditioning of MEMS and advanced packaging substrates prior to bonding.
| Chemical Type | Nonionic, branched polyalkylene oxide surfactant blend |
| Product Form | Ambient-stable, clear to slightly hazy liquid |
| Appearance | Pale yellow to colorless, transparent liquid |
| pH (1% aqueous solution, 25°C) | 6.2 – 7.0 |
| Specific Gravity (25°C) | 1.03 – 1.06 g/cm³ |
| Primary Applications | Wafer surface preparation, post-CMP cleaning, photoresist residue mitigation |
| Key Features | Low volatility, non-reducing, non-corrosive to Al/Cu/TiN |
| Regulatory Compliance | REACH registered; halogen-free (IEC 61249-2-21 compliant); no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| DI Water-Based Immersion Baths | Highly Recommended – Fully miscible with no phase separation or haze formation |
| Megasonic Cleaning Equipment (≤1 MHz) | Highly Recommended – Stable under ultrasonic cavitation; no degradation or foaming |
| Aqueous Alkaline Strippers (pH 10–12) | Recommended – Maintains performance when co-formulated; verify compatibility with specific amine systems |
| Deionized Water Rinse Lines (with DI water recirculation) | Suitable – Low carryover risk; meets particle and TOC specifications for Class 1 cleanrooms |
Q1: What is the CAS Registry Number for 100N15 Semiconductor Surfactant?
A: The CAS number is 2272371-89-4. This identifier applies to the proprietary multi-component blend as supplied; individual constituents are protected under formulation confidentiality.
Q2: What is the recommended usage concentration range in wafer cleaning baths?
A: Typical working concentration is 0.05–0.3 wt% in deionized water. Optimal dosage depends on contaminant load and equipment configuration—validation via SPM/SC1 residual testing is advised.
Q3: How does 100N15 compare to traditional alkylphenol ethoxylates (APEOs) in semiconductor applications?
A: Unlike APEOs, 100N15 contains no alkylphenol moieties, eliminating endocrine-disrupting metabolites and ensuring full compliance with SEMI S2/S8 and global EHS standards. It also delivers superior rinsability and lower TOC contribution.
Q4: Is 100N15 subject to extractable/leachable concerns in contact with fluoropolymer (e.g., PFA, FEP) piping?
A: No significant leachables have been detected per USP <87> and <88> testing protocols. 100N15 shows negligible interaction with high-purity fluoropolymers under standard operating conditions (≤60°C, continuous flow).
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
