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Ultra-high purity (≥99.999% / 5N) with stringent control of metallic impurities (<10 ppt) and particulates.
Consistent vapor pressure and thermal stability ideal for precise, repeatable CVD and epitaxial deposition processes.
Low dew point (≤−70 °C) and minimal moisture content (<0.1 ppmv), ensuring reduced oxide formation during silicon-based film growth.
Controlled synthesis and double-pass purification via fractional distillation and cryogenic trapping to eliminate HCl, SiH₄, and hydrocarbon residuals.
Supplied in ASTM F2238-compliant electropolished stainless steel cylinders with diaphragm-seal valves to prevent contamination and ensure leak-tight delivery.
Chemical Vapor Deposition (CVD) of silicon-containing thin films, including silicon nitride (Si₃N₄) and silicon carbide (SiC) for MEMS and power devices.
Epitaxial silicon growth on silicon wafers in advanced logic and DRAM manufacturing.
Low-temperature silicon deposition for back-end-of-line (BEOL) interconnect barrier layers and seed layers.
Atomic Layer Deposition (ALD) precursor in hybrid SiH₂Cl₂–NH₃ or SiH₂Cl₂–O₃ chemistries for conformal dielectric films.
Surface passivation and in-situ doping in high-efficiency photovoltaic cell fabrication.
| Chemical Type | Reactive inorganic precursor (chlorosilane) |
| Product Form | Colorless liquid under standard conditions; supplied as pressurized vapor in cylinder |
| Appearance | Clear, colorless liquid with pungent, sharp odor |
| Melting Point | −121.5 °C |
| Boiling Point | 8.3 °C at 1 atm |
| Primary Applications | Semiconductor thin-film deposition (CVD/ALD), photovoltaics, MEMS fabrication |
| Key Features | High reactivity, low decomposition temperature (~400–650 °C), excellent film uniformity |
| Regulatory Compliance | REACH registered; OSHA Hazard Communication Standard compliant; SDS available per ISO 11014 |
| Common Compatible Systems | Suitability |
| ASM Eagle XP8 CVD System | Highly Recommended – Optimized for SiH₂Cl₂ flow control and thermal stability up to 700 °C |
| Applied Materials Centura® Platform | Recommended – Compatible with Precision Gas Delivery Module (PGDM) using heated lines and purge protocols |
| Lam Research VECTOR® PECVD | Suitable – Requires nitrogen purging pre- and post-process to mitigate residual chlorine interaction |
| Kokusai Quartz Tube Furnaces (e.g., KTF-1200) | Highly Recommended – Validated for atmospheric and low-pressure SiH₂Cl₂-based epitaxy with quartz-lined reactors |
Q1: What is the CAS Registry Number for dichlorosilane (SiH₂Cl₂)?
A: The CAS Registry Number for dichlorosilane is 4109-96-0.
Q2: How does SiH₂Cl₂ compare to silane (SiH₄) and trichlorosilane (SiHCl₃) in terms of deposition rate and film quality?
A: SiH₂Cl₂ offers higher thermal stability than SiH₄ (reducing premature decomposition), lower chlorine content than SiHCl₃ (yielding lower Cl incorporation and improved film stoichiometry), and enables higher deposition rates than SiHCl₃ at moderate temperatures (500–650 °C).
Q3: Is SiH₂Cl₂ subject to ITAR or EAR export controls?
A: Yes — SiH₂Cl₂ is listed under EAR99 but may require a license for export to embargoed destinations due to its use in semiconductor manufacturing equipment; end-use verification and BIS classification review are mandatory prior to shipment.
Q4: Can SiH₂Cl₂ be used in systems previously configured for silane? What modifications are needed?
A: Direct substitution is not recommended without system requalification; SiH₂Cl₂ requires corrosion-resistant wetted materials (e.g., electropolished SS316L, Hastelloy), heated mass flow controllers (to prevent condensation), and enhanced abatement for HCl byproduct handling.
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