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Ultra-low residue formulation designed for high-purity semiconductor cleaning and rinsing processes.
Non-ionic, fluorosurfactant-based chemistry with exceptional surface tension reduction below 20 mN/m in aqueous systems.
Compatible with ultrapure water (UPW) systems and meets SEMI F57 purity requirements for trace metals and anions.
Thermally stable up to 80 °C; no degradation or foaming under standard wafer rinse conditions.
Readily biodegradable per OECD 301D test method, supporting sustainable manufacturing compliance.
Post-etch and post-CMP residue removal in advanced logic and memory device fabrication.
Wafer-level cleaning prior to photolithography and thin-film deposition steps.
Microfluidic channel conditioning and anti-wetting treatment in MEMS packaging processes.
Defect suppression in immersion lithography topcoat formulations.
Surface energy modification of SiO₂, SiN, and low-k dielectric films during wet processing.
| Chemical Type | Fluorinated non-ionic surfactant (perfluoroalkyl ethoxylate) |
| Product Form | Aqueous solution (20 wt% active in deionized water) |
| Appearance | Clear, colorless to pale yellow liquid |
| pH (1% aqueous solution, 25 °C) | 6.2 – 6.8 |
| Primary Applications | Semiconductor wet cleaning, rinse aid, defect mitigation |
| Key Features | Low volatility, non-foaming, non-corrosive to Al/Cu/low-k materials |
| Benefits | Reduces pattern collapse, improves drying uniformity, minimizes particle re-deposition |
| Regulatory Compliance | REACH registered; RoHS 2 compliant; no SVHCs above threshold per EU Annex XIV |
| Common Compatible Systems | Suitability |
| Ultrapure Water (UPW) rinse lines (18.2 MΩ·cm) | Highly Recommended – Fully miscible; no particulate formation or conductivity drift |
| Standard SC1 (NH₄OH:H₂O₂:H₂O) cleaning baths | Recommended – Stable for ≤15 min at 70 °C; enhances particle lift-off |
| Dilute HF-based etch rinses (0.1–0.5% HF) | Suitable – No fluoride complexation; maintains film integrity on SiO₂/SiN |
| Isopropyl alcohol (IPA) vapor dry systems | Recommended – Improves IPA displacement efficiency without residue |
Q1: What is the CAS Registry Number for 92N20?
A: The CAS number for 92N20 Semiconductor Surfactant is 2277224-89-1.
Q2: What is the recommended dosage range in UPW rinse applications?
A: Typical concentration is 10–50 ppm (v/v) in final rinse water; optimal performance is validated at 25 ppm for 300 mm wafer processing.
Q3: How does 92N20 compare to conventional hydrocarbon surfactants in terms of extractables?
A: 92N20 demonstrates <1 ppb total organic carbon (TOC) extractables after UPW rinse (per SEMI F57), significantly lower than hydrocarbon analogs which typically show >50 ppb under identical conditions.
Q4: Is 92N20 certified for use in ISO Class 1 cleanrooms?
A: Yes — certified per ISO 14644-1 Class 1 airborne molecular contamination (AMC) protocols for non-volatile residues and outgassing.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
