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High-resolution patterning capability with sub-1.5 µm line/space resolution under standard i-line (365 nm) exposure.
Excellent thermal stability up to 130 °C, enabling robust post-exposure bake (PEB) and etch resistance.
Low outgassing profile during vacuum processing, minimizing contamination in lithography tools and mask aligners.
Optimized adhesion to silicon, SiO₂, and metal substrates (e.g., Al, TiW) without mandatory HMDS priming.
Consistent performance across wafer batches, supported by strict lot-to-lot viscosity and solids content control.
MEMS device fabrication requiring high-aspect-ratio resist profiles and chemical resistance.
Power semiconductor patterning for trench gate IGBTs and MOSFETs.
Microfluidic chip development using glass or fused silica substrates.
RF and microwave component manufacturing on GaAs and SiC wafers.
Research-scale photolithography in university cleanrooms and pilot-line facilities.
| Chemical Type | Novolac resin-based positive photoresist with diazonaphthoquinone (DNQ) sensitizer |
| Product Form | Ready-to-use liquid solution in stabilized organic solvent blend |
| Appearance | Clear, pale yellow to amber homogeneous liquid; no sediment or haze |
| Viscosity (25 °C) | 24–26 cP (measured per ASTM D445) |
| Solids Content | 28.5 ± 0.5 wt% (by gravimetric analysis) |
| Primary Applications | i-line (365 nm) lithography for R&D and low-volume production |
| Key Features | High photospeed (~40–60 mJ/cm²), low standing wave effect, minimal swelling in developers |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; non-halogenated formulation |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / i-line steppers | Highly Recommended – Validated for full-field exposure uniformity and CD control |
| Karl Süss MA6 / SB6 mask aligners | Highly Recommended – Optimized for proximity printing at 25 µm gap |
| Tokyo Electron (TEL) CLEAN TRACK ACT series | Recommended – Fully integrated with TEL’s PAB/PEB and develop modules |
| Technics LSC-300 spin coater | Suitable – Compatible with standard chucks and programmable speed profiles (0–6000 rpm) |
Q1: What is the CAS Registry Number for BL301 Photoresist?
A: BL301 Photoresist is a proprietary multi-component formulation; individual CAS numbers are assigned to key constituents only (e.g., novolac resin: 9003-35-4; DNQ: 83-09-4). Full formulation CAS is not assigned per industry practice for blended photoresists.
Q2: What is the recommended coating thickness and spin speed range for 1.2 µm target film?
A: For 1.2 µm dry film thickness on silicon wafers, use 3500–4200 rpm for 30 seconds; final thickness is validated via ellipsometry and correlates within ±5% across 100 mm–200 mm wafers.
Q3: How does BL301 compare to BL200 in terms of resolution and process latitude?
A: BL301 offers superior resolution (<1.5 µm vs. >2.0 µm for BL200) and wider focus latitude (±0.8 µm vs. ±0.4 µm), achieved via refined resin molecular weight distribution and optimized DNQ loading—ideal for demanding MEMS and power device applications.
Q4: Is BL301 suitable for food-contact or medical device manufacturing processes?
A: BL301 is not certified for direct food-contact or implantable medical devices. It meets ISO 10993-5 (cytotoxicity) for short-term tool contact but lacks USP Class VI or FDA 21 CFR 175.300 compliance for end-product migration requirements.
Q5: Are there documented extraction studies for residual monomers or solvents after development and hard bake?
A: Yes—GC-MS analysis per ICH Q5C confirms residual solvent levels <10 ppm post-hard-bake (130 °C, 60 min), and no detectable free phenol or formaldehyde leachables (<0.1 ppm) under simulated acidic aqueous extraction (pH 3.0, 72 h, 25 °C).
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
