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Engineered silica-based abrasive particles with narrow size distribution for uniform planarization and minimal defect generation.
pH-stabilized formulation (typically 9.5–10.5) ensures consistent oxide removal rate and compatibility with standard pad materials.
Low metallic impurity content (<10 ppb Na, K, Fe, Cu) to prevent device contamination in advanced semiconductor fabrication.
Non-settling colloidal dispersion with long-term shelf stability (>12 months unopened at 25°C).
Optimized rheology for stable delivery via OEM slurry dispensing systems without clogging or pulsation.
Shallow Trench Isolation (STI) polishing for 28 nm to 3 nm logic node IC manufacturing.
Interlayer dielectric (ILD) planarization of SiO₂ films in DRAM and NAND flash memory wafers.
Copper barrier layer (Ta/TaN) and overburden copper removal in dual-damascene interconnect processes.
Polishing of low-k dielectrics (e.g., SiCOH) with minimized erosion and dishing control.
Compound semiconductor substrate finishing (e.g., GaN-on-Si, SiC) for power device fabrication.
| Chemical Type | Colloidal silica aqueous dispersion with proprietary pH buffer and corrosion inhibitor system |
| Product Form | Liquid suspension (non-hazardous, non-flammable) |
| Appearance | Opaque white to off-white homogeneous liquid |
| Specific Gravity (25°C) | 1.04–1.08 g/cm³ |
| Viscosity (25°C, 100 s⁻¹) | 2.5–4.0 cP |
| Primary Applications | SiO₂ ILD, STI, and Cu/Ta barrier polishing in front-end-of-line (FEOL) and middle-of-line (MOL) processes |
| Key Features | Low zeta potential magnitude (<|15| mV), high particle surface charge stability, no added heavy metals |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; SDS available per GHS Rev. 7 |
| Common Compatible Systems | Suitability |
| Applied Materials Reflexion® LWM / LK | Highly Recommended – Validated removal rate linearity and within-wafer non-uniformity <3% |
| Ebara F-REX™ Series (F-REX 12, 22) | Highly Recommended – Optimized for Ebara’s dynamic flow control and endpoint detection algorithms |
| SpeedFam Avant™ 330 / 670 | Recommended – Requires minor pad conditioning adjustment; stable performance on IC1000 and Suba® 500 pads |
| Hitachi High-Tech PG-3000 / PG-5000 | Suitable – Compatible with standard slurry delivery modules; recommended for R&D and pilot-line use |
Q1: What is the CAS Registry Number for this CMP slurry?
A: This is a proprietary multi-component formulation; individual components have CAS numbers (e.g., colloidal silica: 7631-86-9), but the final slurry product is not assigned a single CAS number per IUPAC and EPA guidelines.
Q2: What is the typical consumption rate per 300 mm wafer?
A: Average usage ranges from 180–250 mL/wafer under standard process conditions (300 rpm platen speed, 3 psi downforce, 150 mL/min flow rate); actual volume depends on recipe, pad type, and wafer topology.
Q3: How does this slurry compare to ceria- or alumina-based alternatives?
A: Silica-based slurries offer superior selectivity for SiO₂ over silicon nitride and lower surface roughness (Ra <0.12 nm), whereas ceria excels in high-rate STI polishing but poses higher defect risk, and alumina is rarely used due to aggressive scratching and poor dispersion stability.
Q4: Are extractables or leachables data available for high-sensitivity applications?
A: Yes — certified extractables testing per USP <661.2> and ICH Q5C shows <0.5 µg/cm² total organic extractables and undetectable metal leachables (<0.1 ppb) after 72h immersion in deionized water at 60°C.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
