Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Chromium Etchant

Chromium Etchant by Transene Company Inc. – CER-100 series is a precision acidic solution formulated for selective removal of chromium thin films in microelectronics and photomask fabrication. It delivers consistent etch rates with excellent uniformity and minimal undercut, compatible with Cr/CrOx layers on glass, quartz, and silicon substrates. Non-aqueous stabilized for extended shelf life and process reliability.
  • chromium etchant_44c82b8a
  • chromium etchant_44c82b8a

Features Of Chromium Etchant

  1. Highly selective etching of chromium and chromium oxide layers without significant undercutting of underlying substrates.

  2. Stable aqueous formulation with extended bath life under controlled operating conditions.

  3. Low volatility and minimal fuming—enhances workplace safety and reduces ventilation requirements.

  4. pH-stabilized to prevent premature decomposition and ensure consistent etch rates.

  5. Compatible with automated spray, dip, and immersion etching systems for high-volume production.

Typical Applications Of Chromium Etchant

  1. Etching of chromium thin films in semiconductor photomask fabrication.

  2. Removal of chromium adhesion layers prior to lift-off processes in MEMS and microelectronics.

  3. Surface preparation of chromium-plated components for bonding or coating adhesion enhancement.

  4. Defect correction and localized trimming of Cr/CrOx layers on optical coatings and display substrates.

  5. Controlled thinning of sputtered chromium layers in precision sensor manufacturing.

Specifications Of Chromium Etchant



Chemical TypeAqueous acidic etchant (cerium(IV) ammonium nitrate–based)
Product FormLiquid concentrate (ready-to-dilute)
AppearanceClear, pale yellow to amber solution
Primary ApplicationsChromium (Cr), chromium oxide (Cr2O3), and Cr-based alloy etching
Key FeaturesNon-hydrofluoric, non-cyanide, low-corrosivity to stainless steel fixtures
BenefitsReduced environmental impact vs. traditional Cr(VI)-based etchants; compliant with RoHS and REACH SVHC screening
Regulatory ComplianceREACH registered; SDS available per GHS Rev. 8; not classified as PBT/vPvB
Storage ConditionsStore at 10–30°C in original container; protect from direct sunlight and freezing


Compatible Systems Of Chromium Etchant

Common Compatible SystemsSuitability
Stainless steel (316L) etch tanks and pipingHighly Recommended – Excellent corrosion resistance at operating temperatures ≤50°C
Polypropylene (PP) and PVDF immersion bathsHighly Recommended – No chemical degradation observed after 6-month exposure
Automated spray etchers with Teflon®-coated nozzlesRecommended – Requires periodic nozzle inspection due to potential crystalline residue buildup
Ultrasonic cleaning systems (stainless steel tank)Suitable – Effective for small-part etching; avoid prolonged (>15 min) exposure at elevated temperature

Chromium Etchant – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for Chromium Etchant?

A: The primary active ingredient, cerium(IV) ammonium nitrate, has CAS No. 16774-21-3. The formulated product does not carry a single CAS number; full composition is disclosed in Section 3 of the Safety Data Sheet (SDS).


Q2: What is the recommended working concentration and typical etch rate?

A: Dilute 1:4 (v/v) with deionized water for standard use. At 25°C, average etch rate for 100 nm Cr film is 12–18 Å/sec; rate increases linearly with temperature up to 45°C.


Q3: How does this etchant compare to traditional chromium etchants containing chromic acid or ferric chloride?

A: Unlike chromic acid (Cr(VI), carcinogenic) or ferric chloride (highly corrosive, poor selectivity), this formulation uses Ce(IV) chemistry—non-carcinogenic, lower environmental persistence, superior Cr/substrate selectivity (>200:1 over Ti, Ni, and SiO₂), and easier waste treatment via Ce(III) precipitation.


Q4: Is there risk of metal ion migration or leaching into downstream process fluids?

A: Cerium ions exhibit very low solubility in neutral-to-basic rinse waters and do not migrate significantly into photoresist or polymer layers. Residual Ce on wafers is effectively removed by standard SC-1 (NH₄OH:H₂O₂:H₂O) clean; ICP-MS testing shows <0.05 ng/cm² residual after final rinse.



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