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Engineered silica-based abrasive particles with narrow size distribution for consistent removal rate and low defectivity.
Stable pH-controlled formulation (pH 9.5–10.5) ensuring compatibility with copper, barrier metals, and low-k dielectrics.
Non-ionic surfactant system minimizing surface tension and enhancing particle dispersion stability over shelf life.
Low metallic impurity profile (<1 ppb Na, K, Fe, Ni, Cu) to prevent device contamination and leakage current issues.
Ready-to-use liquid slurry requiring no dilution or pre-conditioning—reduces process variability and operator handling.
Copper interconnect planarization in advanced logic and memory IC manufacturing (≤7 nm node).
Tungsten plug polishing for STI (Shallow Trench Isolation) applications in front-end-of-line (FEOL) processing.
Barrier layer (Ta/TaN) removal during dual-damascene integration.
Polishing of cobalt and ruthenium metallization layers in next-generation interconnect schemes.
Planarization of silicon carbide (SiC) and gallium nitride (GaN) power device substrates.
| Chemical Type | Silica-based colloidal dispersion with non-ionic stabilizers |
| Product Form | Aqueous liquid slurry (non-hazardous, non-flammable) |
| Appearance | Opaque white to off-white homogeneous liquid |
| pH (25°C) | 9.8 ± 0.3 |
| Specific Gravity (25°C) | 1.04–1.07 g/cm³ |
| Primary Applications | Cu, W, Ta/TaN, Co, Ru, and SiC/GaN substrate planarization |
| Key Features | Narrow particle size distribution (D50 = 85 ± 5 nm), <0.1% agglomerates >200 nm |
| Regulatory Compliance | REACH SVHC-free; RoHS 3 compliant; SDS available per ISO 45001 guidelines |
| Common Compatible Systems | Suitability |
| Applied Materials Reflexion LK Prime | Highly Recommended – Validated for high-throughput Cu/W polishing with ≤0.5% within-wafer non-uniformity (WIWNU) |
| Ebara F-REX 300 | Highly Recommended – Optimized flow dynamics and pad interaction for low dishing/erosion on 300 mm wafers |
| SpeedFam 372GX | Recommended – Requires minor pad conditioning adjustment; suitable for R&D and pilot line use |
| Strasbaugh 6EC | Suitable – Compatible with standard polyurethane pads; recommended for legacy 200 mm tooling environments |
Q1: What is the CAS Registry Number for this CMP Polishing Slurry?
A: This is a proprietary multi-component formulation; individual ingredients are listed under their respective CAS numbers (e.g., amorphous silica: 7631-86-9). Full ingredient disclosure is provided in the Safety Data Sheet (SDS) upon NDA execution.
Q2: What is the typical consumption rate per 300 mm wafer?
A: Average usage ranges from 180–220 mL/wafer at standard process conditions (100–120 mL/min flow rate, 1.5–2.0 psi downforce, 70–90 rpm platen speed), depending on film stack and target removal rate.
Q3: How does this slurry compare to alumina- or ceria-based alternatives?
A: Silica-based slurries offer superior selectivity control, lower surface roughness (Ra < 0.15 nm), and reduced post-CMP cleaning burden versus alumina. Unlike ceria, they exhibit no catalytic oxidation risk toward Cu or low-k materials and require no acidic rinse steps.
Q4: Is the slurry compliant with semiconductor industry migration testing standards (e.g., SEMI F57, JEDEC JESD22-A106)?
A: Yes—validated per SEMI F57 for extractables analysis (ICP-MS) and meets JEDEC JESD22-A106 requirements for ionic contamination limits in final devices after full BEOL integration and packaging.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
