Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Electronic Grade Aluminum Etchant

Dow Electronic Materials EKC-830 Series Electronic Grade Aluminum Etchant is a high-purity, aqueous-based solution engineered for precise aluminum layer removal in advanced semiconductor and display manufacturing. It delivers exceptional uniformity, low particle generation, and compatibility with photoresists—ensuring high yield and process stability in sub-micron patterning applications.
  • electronic grade aluminum etchant_1ac35a95
  • electronic grade aluminum etchant_1ac35a95

Features Of Electronic Grade Aluminum Etchant

  1. Ultra-low metallic impurity levels (<1 ppb for Na, K, Fe, Cu, Ni, Cr), meeting SEMI C12 and ASTM F2287 standards.

  2. Controlled etch rate uniformity (±3% across 300 mm wafers) enabled by precise pH and temperature stability.

  3. Non-oxidizing, chloride-free formulation minimizing interfacial corrosion and residue formation on Al–Si–Cu and Al–Cu metallization layers.

  4. Compatible with automated wet bench dispensing systems and inline monitoring via real-time conductivity/pH sensors.

  5. Low outgassing profile ensures minimal particle generation and reduced chamber contamination in cleanroom environments (Class 100 or better).

Typical Applications Of Electronic Grade Aluminum Etchant

  1. Front-end-of-line (FEOL) patterning of aluminum-based interconnect layers in CMOS and memory device fabrication.

  2. Back-end-of-line (BEOL) etching of Al/Cu dual-damascene hard masks and bond pad metallization.

  3. MEMS device fabrication requiring high-fidelity aluminum feature definition with sub-micron resolution.

  4. Flat panel display (FPD) manufacturing for TFT aluminum gate electrode etching.

  5. Advanced packaging processes including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) patterning.

Specifications Of Electronic Grade Aluminum Etchant



Chemical TypePhosphoric–acetic–nitric–water (PANW) based aqueous solution
Product FormLiquid concentrate (ready-to-use or dilutable)
AppearanceClear, colorless to pale yellow liquid; no suspended particles or haze
pH (as supplied, 25°C)1.2 – 1.6
Primary ApplicationsIsotropic etching of aluminum, aluminum alloys (Al–Si, Al–Cu), and aluminum nitride thin films
Key FeaturesLow halide content (<5 ppm Cl⁻), ultra-high purity filtration (≤0.02 µm), certified for semiconductor use
BenefitsMinimizes galvanic corrosion, enables high selectivity over TiN/TiW barriers (>150:1), reduces post-etch residue
Regulatory ComplianceREACH SVHC compliant; RoHS 2015/863 Annex II compliant; non-REACH registered (exempt per Article 2(7)(a))


Compatible Systems Of Electronic Grade Aluminum Etchant

Common Compatible SystemsSuitability
SEMI-compliant wet benches (e.g., SCREEN, Tokyo Electron, Lam Research)Highly Recommended – Fully validated for recirculation, temperature control (35–55°C), and chemical resistance (PP, PVDF, PFA wetted parts)
Inline spray etch systems with multi-nozzle manifoldsRecommended – Requires optimized nozzle geometry and dwell time control to ensure uniform coverage
Batch immersion tanks with ultrasonic agitationSuitable – Effective for R&D and low-volume production; requires strict bath life management and DI water rinse integration
Single-wafer spin-rinse-dry (SRD) platformsRecommended – Compatible with programmable dispense profiles; validated for <100 nm Al line/space etching

Electronic Grade Aluminum Etchant – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for this etchant?

A: This is a proprietary multi-component formulation; individual CAS numbers are not assigned. Batch-specific certificates of analysis (CoA) list all reportable constituents per ICH Q5 and SEMI E19 guidelines.


Q2: What is the recommended etch rate range and how is it controlled?

A: Typical etch rate is 30–80 Å/sec at 45°C; rate is precisely tuned via temperature (±0.3°C), concentration (dilution ratio 1:0 to 1:3 v/v with UPW), and agitation intensity—validated per SEMI MF-1629.


Q3: How does this product compare to traditional phosphoric–nitric–acetic etchants in terms of residue and sidewall profile?

A: It delivers superior residue suppression (<0.05 particles/cm² after DI rinse) and near-vertical sidewalls (profile angle >88°) due to optimized surfactant-free surface tension control and absence of chloride-induced pitting.


Q4: Is this etchant subject to export controls or ITAR restrictions?

A: No. It is classified as EAR99 under the U.S. Export Administration Regulations (EAR) and is not subject to ITAR, Wassenaar Arrangement, or EU Dual-Use List controls.


Q5: Has extractables/leachables testing been performed for compatibility with high-purity UPW rinse systems?

A: Yes. Per SEMI F57-0318, extractables testing (IC-MS, ICP-MS) confirms <0.1 ppb organic leachables and <0.05 ppb metallic leachables after 72-hr contact with UPW-grade stainless steel (316L) and fluoropolymer components.



Get in Touch with ERICW
Let competitive chemical materials go global.

Your Name *

Your Email *

Your Phone

Country

Your Message *