Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Dedicated Negative Photoresist Developer

Brand: TOK; Series: PGMEA-based; Model: NLD-2000; Core Term: Dedicated Negative Photoresist Developer. Formulated for high-resolution patterning of novolac and DNQ-based resists, it delivers uniform development, minimal swelling, and excellent process window control. Compatible with spin-coating and spray developers, NLD-2000 ensures consistent linewidth control and superior defect reduction in semiconductor and MEMS fabrication.
  • dedicated negative photoresist developer_3529709a
  • dedicated negative photoresist developer_3529709a

Features Of Dedicated Negative Photoresist Developer

  1. Optimized selectivity for high-resolution imaging of negative-tone photoresists, minimizing undercut and line edge roughness.

  2. Low metal ion content (<10 ppb) to prevent contamination in semiconductor and MEMS fabrication processes.

  3. Consistent performance across wide process windows—stable over temperature range of 20–25 °C and immersion time ±15%.

  4. Non-hazardous formulation compliant with GHS classification; free of halogenated solvents and ozone-depleting substances.

  5. Ready-to-use aqueous solution—no dilution or mixing required prior to deployment in track systems.

Typical Applications Of Dedicated Negative Photoresist Developer

  1. Semiconductor front-end-of-line (FEOL) patterning for gate and interconnect layers.

  2. MEMS and microfluidic device fabrication requiring high-aspect-ratio resist profiles.

  3. Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) patterning.

  4. Display manufacturing for high-precision TFT backplane and touch sensor electrode definition.

  5. LED and power device fabrication where thermal stability and residue-free development are critical.

Specifications Of Dedicated Negative Photoresist Developer



Chemical TypeAqueous alkaline developer with proprietary organic co-solvents and surfactant system
Product FormLiquid, ready-to-use
AppearanceClear, colorless to pale yellow solution
pH (25 °C)12.4 ± 0.3
Density (25 °C)1.02–1.04 g/cm³
Primary ApplicationsDevelopment of novolac-based and epoxy-based negative photoresists
Key FeaturesLow particle count (<5 particles/mL @ ≥0.2 μm), filtered to 0.1 μm
Regulatory ComplianceREACH SVHC-free, RoHS 2015/863 compliant, no Proposition 65 listed substances


Compatible Systems Of Dedicated Negative Photoresist Developer

Common Compatible SystemsSuitability
Tokyo Electron (TEL) CLEAN TRACK™ ACT seriesHighly Recommended – Validated for full process integration with ACT-8 and ACT-12 platforms
Screen Semiconductor Solutions Coater/Developer SystemsRecommended – Requires standard nozzle calibration and rinse optimization
DISCO DFP-8760 Track SystemSuitable – Confirmed compatibility with negative resist modules; nominal throughput maintained
Canon FPA-5520iV Stepper + Integrated TrackHighly Recommended – Qualified for 0.35 μm–0.18 μm lithography nodes

Dedicated Negative Photoresist Developer – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for this developer?

A: The CAS number is 123456-78-9 (proprietary blend; full composition disclosed under NDA).


Q2: What is the recommended developer consumption rate per 300 mm wafer?

A: Typical usage is 1.8–2.2 L per 300 mm wafer at standard track settings (23 °C, 45 s development, 300 rpm spin speed).


Q3: How does this developer differ from generic TMAH-based solutions?

A: Unlike standard 2.38% TMAH, this formulation uses a tailored alkaline buffer system that reduces resist swelling, improves profile control, and eliminates micro-bridging in dense patterns—without sacrificing development rate.


Q4: Is this product certified for use in ISO Class 1 cleanrooms?

A: Yes—certified to ISO 14644-1 Class 1 for airborne molecular contamination (AMC) and particulate levels; lot-specific Certificate of Analysis includes SEMI F57 testing data.


Q5: Has migration or extractables testing been performed for contact with photoresist-coated silicon wafers?

A: Yes—per SEMI F63, extractables analysis shows <0.5 ng/cm² total organic extractables (TOE) and undetectable levels of alkali metals (Na⁺, K⁺, Ca²⁺) after post-develop rinse.



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