English
Español
tiếng việt
русский
Ultra-high purity (≥99.999% / 5N) with stringent control of metallic impurities and moisture.
Non-toxic handling profile compared to alternative fluorinating agents such as ClF₃ or F₂ — significantly lower acute inhalation hazard.
Thermally stable and non-corrosive to standard stainless-steel gas delivery systems when dry and properly maintained.
High etch selectivity and uniformity in plasma-enhanced chemical vapor deposition (PECVD) and reactive ion etching (RIE) processes.
Low global warming potential (GWP = 17,200) relative to SF₆ and PFCs — supports semiconductor industry sustainability goals.
Plasma cleaning of CVD chambers in silicon nitride and silicon oxide deposition tools.
Etchant for silicon, silicon dioxide, and silicon nitride layers in advanced logic and memory device fabrication.
Key process gas in flat-panel display (FPD) manufacturing, especially for amorphous and low-temperature polycrystalline silicon (LTPS) TFT backplanes.
Surface conditioning and residue removal in high-aspect-ratio via and trench etch applications.
Enabling atomic-layer etching (ALE) sequences requiring precise, self-limiting fluorine delivery.
| Chemical Type | Inorganic fluorinating specialty gas |
| Product Form | Compressed liquefied gas in high-pressure cylinders (typically 44–55 L, 200 bar working pressure) |
| Appearance | Colorless, odorless gas at ambient conditions; forms a colorless liquid under pressure |
| Melting Point | −206.8 °C (−340.2 °F) |
| Boiling Point | −129.0 °C (−200.2 °F) at 1 atm |
| Primary Applications | Semiconductor manufacturing, flat-panel display production, LED and power device fabrication |
| Key Features | High decomposition efficiency in plasma (>95%), low particle generation, compatibility with standard abatement systems |
| Regulatory Compliance | REACH registered; OSHA-compliant SDS available; meets SEMI G49-0312 (NF₃) and ISO 8573-1 Class 1:1:1 for particulates/moisture/hydrocarbons (when supplied with ultra-high-purity manifold) |
| Common Compatible Systems | Suitability |
| Lam Research Flex® and Kiyo® platforms | Highly Recommended – Optimized NF₃ flow control and plasma ignition protocols validated |
| Applied Materials Centura® and Endura® systems | Highly Recommended – Integrated abatement compatibility and chamber cleaning SOPs established |
| Tokyo Electron (TEL) Unity™ and Telius® reactors | Recommended – Requires minor RF matching adjustments; full process qualification support available |
| ASM International Eagle® series | Suitable – Compatible with standard gas panels; recommended use with inline moisture/particle filters |
Q1: What is the CAS Registry Number for Nitrogen Trifluoride (NF₃)?
A: The CAS Registry Number for Nitrogen Trifluoride is 7783-54-2.
Q2: How does NF₃ consumption compare to other fluorine-based etchants like CF₄ or SF₆?
A: NF₃ delivers higher fluorine atom yield per molecule in plasma (≈3 active F atoms vs. ~1.2 for CF₄), resulting in up to 40% lower volumetric consumption for equivalent chamber cleaning throughput.
Q3: Is NF₃ compatible with existing gas cabinets and delivery lines used for silane or ammonia?
A: Yes — NF₃ is compatible with electropolished 316L stainless-steel piping and VCR® fittings. However, dedicated lines are recommended to prevent cross-contamination; it must not be mixed with reducing gases (e.g., SiH₄, NH₃) upstream of the process chamber due to potential exothermic reaction risks.
Q4: Does NF₃ require special regulatory reporting under the U.S. EPA GHG Reporting Program?
A: Yes — NF₃ is a covered fluorinated greenhouse gas under 40 CFR Part 98, Subpart L. Facilities using ≥1,000 kg/year must report annual emissions, including abatement system destruction efficiency data.
Q5: Can NF₃ be safely extracted from cylinder manifolds without phase separation concerns?
A: Yes — NF₃ remains fully gaseous above −129 °C at atmospheric pressure and exhibits no liquid/vapor stratification during controlled withdrawal. Standard pressure-regulated extraction maintains consistent composition without fractionation.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
Have a Questions? Call Us:
Add:
Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
