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Ultra-low ionic residue for minimal post-process contamination in high-precision semiconductor cleaning.
Exceptional wetting and penetrating capability on hydrophobic silicon wafers and low-k dielectric surfaces.
Thermally stable up to 120 °C, enabling compatibility with elevated-temperature rinse and drying steps.
Non-foaming formulation designed for immersion, spray, and megasonic cleaning equipment.
Readily biodegradable under OECD 301B conditions, supporting sustainable manufacturing goals.
Pre-deposition wafer cleaning prior to CVD, ALD, or epitaxial growth.
Post-CMP (Chemical Mechanical Polishing) residue removal for copper and barrier layers.
Photoresist stripping support in aqueous-based strippers for advanced node lithography.
Particle removal from MEMS and advanced packaging substrates (e.g., fan-out wafer-level packaging).
Surface activation of SiC and GaN wafers prior to metallization or bonding processes.
| Chemical Type | Nonionic ethoxylated alkylphenol derivative (non-APEO compliant) |
| Product Form | Ambient-stable, clear to pale yellow liquid concentrate |
| Appearance | Clear, homogeneous liquid; no phase separation at 5–40 °C |
| pH (1% aqueous solution, 25 °C) | 6.8 – 7.2 |
| Primary Applications | Front-end-of-line (FEOL) and back-end-of-line (BEOL) aqueous cleaning |
| Key Features | Low volatility, non-corrosive to Al, Cu, and TiN; halogen-free |
| Benefits | Reduces defect density by >35% vs. conventional surfactants in 28 nm node validation trials |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no listed TSCA or IEC 62474 CoC restrictions |
| Common Compatible Systems | Suitability |
| DI Water-based spray rinse systems (e.g., Tokyo Electron ACT series) | Highly Recommended – Optimized for <1 ppm total organic carbon (TOC) carryover |
| Megasonic cleaning baths (200–950 kHz, 30–60 °C) | Highly Recommended – Demonstrated >99.2% particle removal efficiency (≥0.13 µm) on 300 mm wafers |
| Aqueous photoresist strippers (e.g., DuPont Riston-compatible formulations) | Recommended – Enhances solubilization without compromising resist edge acuity |
| Single-wafer spin-rinse-dry (SRD) platforms | Suitable – Low surface tension (28.5 mN/m @ 25 °C) ensures uniform film drainage and dry pattern integrity |
Q1: What is the CAS Registry Number for DF-103?
A: The CAS RN for DF-103 Semiconductor Surfactant is 2189182-47-1. This number applies to the proprietary blend as manufactured and tested per IPC-CC-830B qualification standards.
Q2: What is the recommended working concentration range?
A: Typical use concentration is 0.05–0.3 wt% in deionized water (18.2 MΩ·cm), depending on soil load and process temperature. Validation data supports stability and performance across this range without foaming or residue formation.
Q3: How does DF-103 compare to DF-101 in terms of residue control?
A: DF-103 exhibits >50% lower volatile organic residue (VOR) and negligible sodium/potassium leaching versus DF-101, as confirmed by TOF-SIMS and ICP-MS analysis on post-clean 300 mm wafers.
Q4: Is DF-103 subject to extractables or leachables concerns in high-purity process tools?
A: No. DF-103 has passed ASTM F2858-22 extractables testing in stainless steel and fluoropolymer-wetted systems, with total organic extractables <0.8 µg/cm² after 72-hr static exposure at 60 °C.
Q5: Does DF-103 require special handling or storage conditions?
A: Store unopened containers at 10–30 °C in original packaging, away from direct sunlight. Shelf life is 24 months from manufacture date when stored per SDS Section 7. No inert gas blanketing required.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
