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Ultra-high purity (≥99.999% / 5.0 grade) with stringent control of moisture, oxygen, and total hydrocarbon impurities.
Consistent batch-to-batch reproducibility certified via GC-TCD and FTIR analysis for electronic-grade reliability.
Manufactured and packaged under ISO 14644-1 Class 5 cleanroom conditions to prevent particle contamination.
Supplied in electropolished stainless-steel cylinders with diaphragm valves and CGA 650 connections for leak-tight delivery.
Traceability supported by full Certificate of Analysis (CoA), Material Safety Data Sheet (MSDS), and lot-specific QC records.
Plasma-enhanced chemical vapor deposition (PECVD) of silicon oxynitride (SiON) dielectric layers.
Atomic layer deposition (ALD) precursor for high-k gate dielectrics in advanced logic and memory devices.
Reactive ion etching (RIE) process gas additive to improve selectivity and anisotropy in oxide etch steps.
Nitridation agent in thermal and plasma nitridation of silicon surfaces for interface passivation.
Calibration standard and reference gas for semiconductor process monitoring and emission analyzers.
| Chemical Type | Inorganic specialty gas, oxidizing agent |
| Product Form | Compressed liquefied gas (non-flammable) |
| Appearance | Colorless, non-corrosive gas with faint sweet odor |
| Melting Point | −90.8 °C |
| Boiling Point | −88.5 °C at 1 atm |
| Primary Applications | Semiconductor fabrication, display manufacturing, LED production |
| Key Features | High thermal stability, low metal impurity content (<1 ppt), ultra-low particulate count |
| Regulatory Compliance | Meets SEMI C37 (Electronic Gases) and ASTM D7607 standards; REACH & RoHS compliant |
| Common Compatible Systems | Suitability |
| Applied Materials Centura® PECVD Platforms | Highly Recommended – Validated for SiON film growth with optimized uniformity and stress control |
| Lam Research Kiyo® and Exelan® Etch Systems | Recommended – Used as process additive for improved oxide:photoresist selectivity |
| Tokyo Electron (TEL) Unity® ALD Tools | Highly Recommended – Certified carrier and reactant gas for TaN, TiN, and AlN film deposition |
| Entegris Gas Delivery Systems (GDS) with VCR®/VCO® fittings | Suitable – Compatible with ultra-high-purity stainless-steel gas distribution lines and purifiers |
Q1: What is the CAS Registry Number for electronic-grade nitrous oxide?
A: The CAS Number is 10024-97-2. Our electronic-grade N₂O is manufactured to meet SEMI C37 specifications and carries full traceable lot documentation confirming identity and purity.
Q2: How does electronic-grade N₂O differ from medical or industrial grades in terms of usage in semiconductor tools?
A: Electronic-grade N₂O undergoes additional purification (e.g., cryogenic distillation, getter filtration) to reduce metallic impurities (<1 ppt), particles (<1 per mL @ ≥0.1 µm), and reactive contaminants (H₂O <0.1 ppmv, O₂ <0.1 ppmv), preventing device yield loss and chamber contamination.
Q3: Can electronic-grade N₂O be used interchangeably with NO or NH₃ in ALD processes?
A: No — N₂O serves distinct reaction chemistry (oxygen/nitrogen co-delivery with lower reactivity). It is not a direct substitute for NO (stronger oxidizer) or NH₃ (nitrogen source only); process qualification and endpoint monitoring are required before migration.
Q4: Is cylinder residue or extractables testing performed for this product?
A: Yes — all cylinders undergo pre-use leach testing per SEMI F57, with ICP-MS analysis confirming ≤0.5 ppt metallic extractables (Fe, Cr, Ni, Cu, Na, K) and no detectable organosilicon residues.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
