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Engineered for ultra-low ionic residue to minimize post-cleaning contamination in advanced packaging processes.
Exceptional compatibility with copper, low-k dielectrics, and photoresist materials commonly used in back-end-of-line (BEOL) integration.
Highly effective at reducing surface tension without compromising film integrity or inducing pattern collapse.
Formulated with high-purity raw materials to meet stringent semiconductor-grade metal and anion specifications.
Stable performance across a broad pH range (pH 4–9), supporting compatibility with diverse rinse chemistries.
Copper interconnect cleaning during wafer-level packaging (WLP) and fan-out processes.
Rinse additive in post-chemical-mechanical polishing (post-CMP) cleaning for BEOL metal layers.
Surfactant component in low-residue, aqueous-based residue removal formulations for redistribution layer (RDL) processing.
Performance enhancer in solvent-free or water-dilutable cleaning solutions for bump and under-bump metallization (UBM) structures.
Key ingredient in final rinse formulations for advanced 2.5D/3D IC stacking applications requiring ultra-clean interfaces.
| Chemical Type | Nonionic surfactant blend (ethoxylated alkylphenol derivatives) |
| Product Form | Ambient-stable, viscous liquid |
| Appearance | Pale yellow to amber, clear to slightly hazy liquid |
| Primary Applications | Back-end-of-line (BEOL) rinse and cleaning formulations |
| Key Features | Low foaming, non-ionic, low volatility, hydrolytically stable |
| Benefits | Reduces water spotting, improves drying uniformity, minimizes particle redeposition |
| Regulatory Compliance | REACH registered; RoHS compliant; no intentionally added PFAS |
| Storage Stability | ≥24 months at 15–25°C in unopened original container |
| Common Compatible Systems | Suitability |
| Deionized Water (DIW) Rinse Systems | Highly Recommended – Enables rapid, uniform sheeting and drying without residue |
| Acidic Post-CMP Cleaners (e.g., dilute citric/phosphoric blends) | Recommended – Maintains surfactant efficacy and stability below pH 5 |
| Alkaline Resist Strippers (pH 8–9) | Suitable – Retains performance without significant hydrolysis or precipitation |
| Isopropyl Alcohol (IPA)/Water Co-Rinse Formulations | Highly Recommended – Enhances phase compatibility and reduces surface energy synergistically |
Q1: What is the CAS Registry Number for Dow TRITON DF-25?
A: The CAS number for Dow TRITON DF-25 is 68441-17-8 (representative of the primary ethoxylated nonylphenol component; full formulation is proprietary and protected under trade secret provisions).
Q2: What is the typical recommended dosage level in rinse formulations?
A: Standard use level ranges from 0.05% to 0.3% v/v in DIW-based final rinse steps; optimal concentration should be validated per tool configuration and process window requirements.
Q3: How does TRITON DF-25 compare to TRITON X-100 in semiconductor applications?
A: Unlike TRITON X-100, DF-25 is specifically purified to reduce sodium, chloride, sulfate, and heavy metals; it also exhibits superior hydrolytic stability at elevated temperatures and lower propensity for extractables in critical BEOL cleaning.
Q4: Is TRITON DF-25 compliant with SEMI S2/S8 safety and environmental standards?
A: Yes — TRITON DF-25 has been assessed per SEMI S2 guidelines and meets occupational exposure limits (OEL) for handling; SDS includes full S8 hazard evaluation and waste disposal guidance for fab environments.
Q5: Has migration or leaching of TRITON DF-25 components been observed in bonded dielectric interfaces?
A: No evidence of migration has been reported under standard process conditions (≤80°C, ≤60 sec dwell time); rigorous TOF-SIMS and FTIR analysis on cured low-k films confirms absence of surfactant-derived residues at interface boundaries.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
