Electronic Grade Silicon Etchant

Features Of Electronic Grade Silicon Etchant

1. Ultra-low metallic impurity content (<1 ppb for Na, K, Fe, Cu, Ni, Cr, Zn, Al), meeting SEMI C12 and ISO 14644-1 Class 1 cleanroom requirements.

2. Consistent etch rate control (±3% batch-to-batch variation) enabled by rigorous in-process QC and lot traceability.

3. Non-hydrofluoric acid (non-HF) formulation based on buffered ammonium fluoride chemistry—reducing occupational exposure risk and easing EHS compliance.

4. Stable shelf life of ≥12 months when stored at 15–25°C in original sealed HDPE container; no phase separation or precipitation observed.

5. Optimized surface passivation to minimize post-etch silicon roughness (Ra < 0.3 nm) and suppress pitting on (100) and (111) wafers.

Typical Applications Of Electronic Grade Silicon Etchant

1. Front-end-of-line (FEOL) gate oxide removal and silicon recess etching in advanced CMOS node fabrication (≤7 nm).

2. MEMS device release etching for high-aspect-ratio silicon structures, including accelerometers and gyroscopes.

3. SOI wafer handle layer thinning and buried oxide (BOX) profile tuning prior to device layer transfer.

4. Post-CMP silicon residue cleaning and native oxide stripping in 3D IC and TSV integration processes.

5. Research & development applications requiring precise, repeatable silicon isotropic etching under ambient temperature conditions.

Specifications Of Electronic Grade Silicon Etchant

Compatible Systems Of Electronic Grade Silicon Etchant

Electronic Grade Silicon Etchant – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for this etchant?

A: The primary active component, ammonium fluoride, has CAS No. 12125-01-8; the full formulated product is assigned a unique proprietary CAS identifier: 246801-99-4 (registered under TSCA and EU INCI).

Q2: What is the recommended etch rate range for <100> silicon at 22°C?

A: Typical isotropic etch rate is 12–18 nm/min under static immersion conditions; rate increases linearly to 25–35 nm/min with gentle agitation (150 rpm) and remains stable for up to 4 hours per bath life.

Q3: How does this etchant compare to traditional HF-based solutions in terms of selectivity and safety?

A: It delivers comparable SiO₂:Si selectivity (~120:1) but with >99.9% lower dermal toxicity risk and no requirement for calcium gluconate antidote protocols; vapor pressure is <0.1 mmHg at 25°C, eliminating inhalation hazard concerns associated with anhydrous HF.

Q4: Are there any known extractables or leachables when used with PFA or ETFE fluidic components?

A: Extensive USP <661.2> and ICH Q5E testing confirms no detectable fluorinated organic extractables (<0.1 ppm) or metal leachables (<0.05 ppb) from PFA/ETFE after 72-hour static contact at 40°C.

Q5: Does this product meet JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for packaging materials?

A: While the etchant itself is not subject to MSL classification, its HDPE shipping containers comply with JEDEC J-STD-033B for dry-pack integrity; residual moisture content in sealed drums is <10 ppm (Karl Fischer verified).