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Ultra-high purity (≥99.999% / 5N) optimized for critical semiconductor etch processes.
Exceptional thermal and chemical stability under plasma conditions, minimizing unwanted byproducts.
Low global warming potential (GWP = 8,700) relative to legacy perfluorocarbons—supporting sustainability targets.
Precise etch selectivity for silicon dioxide and silicon nitride in advanced node fabrication (≤7 nm).
Consistent vapor pressure profile enabling reliable mass flow control in high-precision delivery systems.
Plasma etching of dielectric films (SiO₂, Si₃N₄) in DRAM and 3D NAND memory manufacturing.
High-aspect-ratio contact etch in logic device front-end-of-line (FEOL) integration.
Passivation layer modification during MEMS and RF filter fabrication.
Source gas in fluorocarbon-based plasma cleaning of CVD and PECVD chambers.
Co-precursor with O₂ or Ar in dual-frequency capacitively coupled plasma (CCP) reactors.
| Chemical Type | Perfluorinated cyclic hydrocarbon |
| Product Form | Compressed liquefied gas (cylinder supply) |
| Appearance | Colorless, odorless gas at ambient conditions |
| Melting Point | −6.3 °C |
| Boiling Point | 63.3 °C |
| Primary Applications | Semiconductor plasma etching and chamber cleaning |
| Key Features | High molecular weight (200.03 g/mol), low reactivity outside plasma zone |
| Regulatory Compliance | Meets SEMI G49-0322 (Electronic Grade), REACH registered, non-ODS |
| Common Compatible Systems | Suitability |
| Applied Materials Centura® & Producer® platforms | Highly Recommended – Validated for high-selectivity oxide etch modules |
| Lam Research Kiyo® & Exelan® etch systems | Highly Recommended – Supported in multi-frequency CCP configurations |
| Tokyo Electron (TEL) Unity® and Symmetry® platforms | Recommended – Requires standard gas panel calibration per TEL SPC-102 |
| ASM International Eagle® PECVD & plasma clean tools | Suitable – Effective for post-etch residue removal; verify with ASM Tech Bulletin C4F8-2023 |
Q1: What is the CAS Registry Number for Octafluorocyclobutane (C₄F₈)?
A: The CAS number is 163-19-5.
Q2: How does C₄F₈ compare to CF₄ or C₂F₆ in terms of etch rate and selectivity?
A: C₄F₈ delivers significantly higher etch selectivity (>80:1 for SiO₂:Si) and lower ion-induced damage than CF₄ or C₂F₆, especially in sub-10 nm high-k/metal gate stacks.
Q3: Is C₄F₈ subject to EU F-Gas Regulation phase-down quotas?
A: Yes—C₄F₈ is listed under Annex I of Regulation (EU) No 517/2014 and falls within the F-Gas quota system; certified supply includes allocation documentation and verified GWP reporting.
Q4: Can C₄F₈ be extracted or recovered from exhaust streams using standard abatement technologies?
A: Yes—C₄F₈ is effectively decomposed in thermal and plasma-based abatement systems (e.g., Veeco Energi™, Edwards XDL™) with >99.9% destruction efficiency when operated above 1,000 °C.
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E-mail: wangxingqiang@ericwchem.com
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