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Enables ultra-uniform copper deposition with exceptional bottom-up fill capability for sub-65 nm interconnect trenches and vias.
Highly selective acceleration at cathode surface without promoting dendritic growth or void formation.
Stable performance across wide operating current density range (1–40 A/dm²) and temperature (20–30 °C).
Low-additive-consumption formulation reduces drag-out losses and improves bath longevity.
Compatible with real-time monitoring systems via cyclic voltammetric stripping (CVS) analysis.
Advanced semiconductor back-end-of-line (BEOL) copper electroplating for logic and memory devices.
Through-silicon via (TSV) filling in 3D IC packaging processes.
Wafer-level packaging (WLP) and fan-out wafer-level packaging (FOWLP) interconnect metallization.
High-aspect-ratio microvia filling in advanced HDI PCBs for high-speed computing.
Electrochemical metallization for MEMS and advanced sensor interconnects.
| Chemical Type | Sulfonated organic accelerator (bis-(3-sulfopropyl) disulfide derivative) |
| Product Form | Aqueous liquid concentrate (40 wt% active in deionized water) |
| Appearance | Clear, pale yellow to amber liquid |
| pH (1% aqueous solution) | 3.8 – 4.5 |
| Primary Applications | Copper acid sulfate plating baths for microelectronics interconnects |
| Key Features | High acceleration efficiency, low decomposition rate, excellent stability in chloride-containing baths |
| Benefits | Reduces overfill requirement by up to 30%, improves planarization yield, lowers post-CMP copper residue |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above 0.1% w/w |
| Common Compatible Systems | Suitability |
| Enthone® CU-2000 Series Baths | Highly Recommended – Fully validated for 7 nm to 28 nm node integration |
| Atotech® AP-800 / AP-900 Platforms | Highly Recommended – Optimized dosage protocol available upon technical consultation |
| Technic® Electrobright™ Cu-1000 | Recommended – Requires minor bath conditioning; compatible with standard suppressors |
| Shenzhen Rongsheng™ RS-CuPlex™ | Suitable – Validated for 45 nm+ nodes; not recommended for <22 nm without process qualification |
Q1: What is the CAS Registry Number for this accelerator?
A: The CAS number is 154642-78-3 (for the primary active component, sodium bis-(3-sulfopropyl) disulfide).
Q2: What is the typical working concentration range in copper plating baths?
A: Standard dosage is 0.5–2.0 mL/L in conjunction with suppressor (e.g., PEG-based) and leveler; optimal concentration is determined via CVS titration and verified by cross-sectional SEM.
Q3: How does this accelerator differ from conventional SPS in high-resolution interconnect plating?
A: Unlike standard SPS, this derivative exhibits slower diffusion kinetics and higher adsorption affinity at high-current-density features, enabling superior superconformal fill without excessive sidewall acceleration or “mushrooming”.
Q4: Is migration or leaching of accelerator residues observed after thermal cycling or reliability testing?
A: No measurable migration or extraction was detected under JEDEC JESD22-A108F (1000 h at 150 °C) or IPC-TM-650 2.6.25.1 (ionic contamination test); residual sulfur content remains below 0.05 ppm after post-plating rinse and anneal.
Q5: Does this product carry any industry-specific certifications beyond REACH/RoHS?
A: Yes — certified to ISO 9001:2015 and IATF 16949:2016 for automotive-grade semiconductor supply chains; also qualified per SEMI S2/S8 safety standards for wafer fab use.
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