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High-resolution patterning capability with sub-micron resolution down to 0.35 µm using i-line (365 nm) exposure.
Excellent thermal stability up to 140 °C, enabling robust post-exposure bake (PEB) and hard bake processes.
Superior adhesion to silicon, SiO₂, and metal substrates without requiring additional adhesion promoters.
Low outgassing profile suitable for vacuum-based lithography tools and EUV pre-alignment steps.
Optimized for high-throughput spin-coating with consistent film uniformity (< ±2.5% across 200 mm wafers).
Front-end-of-line (FEOL) gate patterning in advanced CMOS logic devices.
MEMS sensor fabrication requiring high aspect-ratio resist profiles and etch resistance.
Power semiconductor device manufacturing (e.g., IGBTs, SiC diodes) with thick-film process compatibility.
Microfluidic chip prototyping on glass and fused silica substrates.
Advanced packaging applications including redistribution layer (RDL) patterning for fan-out wafer-level packaging (FOWLP).
| Chemical Type | Novolac resin–based positive-tone photoresist |
| Product Form | Liquid concentrate (ready-to-use, solvent-based) |
| Appearance | Clear, pale yellow solution, free of visible particles or gels |
| Primary Applications | i-line (365 nm) photolithography for 0.35–1.0 µm feature sizes |
| Key Features | High photospeed (~40 mJ/cm²), low standing wave effect, minimal T-top formation |
| Benefits | Reduced process cycle time, improved CD uniformity, enhanced process window (DOF > 1.2 µm at 0.5 µm line) |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no intentionally added PFAS |
| Storage Conditions | 4–25 °C in original sealed container; protect from light and moisture |
| Common Compatible Systems | Suitability |
| Canon FPA-3000 i-line Stepper | Highly Recommended – Validated for full production use with standard focus/exposure calibration |
| Nikon NSR-2205 i-line Scanner | Highly Recommended – Qualified for 200 mm and 300 mm wafer processing |
| Tokyo Electron CLEAN TRACK ACT series (ACT-12, ACT-13) | Recommended – Requires minor dispense volume and PEB ramp optimization |
| ASML PAS 5500/300 i-line Platform | Suitable – Functional performance confirmed; full qualification support available upon request |
Q1: What is the CAS Registry Number for FB5610 Photoresist?
A: FB5610 Photoresist is a proprietary formulation; individual components are disclosed under NDA. The bulk product is assigned CAS No. 2279568-42-1 for regulatory tracking and SDS referencing.
Q2: What is the typical consumption rate per 200 mm wafer?
A: At standard spin parameters (3000 rpm, 30 s), average consumption is 2.8–3.2 mL per 200 mm wafer for 1.2 µm dry film thickness. Yield varies ±0.3 mL depending on substrate hydrophobicity and edge bead removal settings.
Q3: How does FB5610 compare to FB5500 in terms of resolution and etch resistance?
A: FB5610 offers ~15% higher etch resistance in CF₄/O₂ plasma versus FB5500 and achieves 0.35 µm resolution vs. FB5500’s 0.5 µm limit. It also features 20% faster photospeed but requires tighter PEB temperature control (±0.5 °C).
Q4: Is FB5610 certified for use in medical device manufacturing under ISO 10993 or USP Class VI?
A: FB5610 is not ISO 10993 or USP Class VI certified. It is intended for semiconductor and microfabrication use only. Residual monomer extraction testing data is available under NDA for qualifying customers pursuing biocompatible process development.
Q5: Has migration or extractables testing been performed for FB5610 under acidic or aqueous conditions?
A: Yes — per ICH Q5C guidelines, aqueous (pH 3.0 and 7.4) and 50% ethanol/water extractables testing shows total organic extractables < 1.2 µg/cm² after 72 h at 40 °C. Full analytical report (HPLC-MS/GC-MS) available under confidentiality agreement.
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E-mail: wangxingqiang@ericwchem.com
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