English
Español
tiếng việt
русский
Freestanding (FS) gallium nitride substrate with low dislocation density (< 5 × 10⁶ cm⁻²) for high-power and high-frequency device performance.
Carbon-doped (C-doped) n-type conductivity control enabling stable, reproducible epitaxial growth of high-electron-mobility transistors (HEMTs).
Polished double-side Si-face orientation (C-plane) with atomic-level surface roughness (Ra < 0.2 nm) for optimal heteroepitaxy.
100 mm (4-inch) diameter wafer format compatible with standard III-nitride MOCVD and MBE toolsets.
Thermally robust structure with minimal bow (< 20 µm) and warp (< 15 µm), ensuring high-yield lithography and processing.
High-power RF amplifiers for 5G base stations and satellite communication systems.
High-efficiency power converters in EV onboard chargers and industrial DC-DC modules.
UV-C optoelectronic devices including deep-ultraviolet LEDs and laser diodes.
High-temperature electronics for aerospace and downhole oil & gas sensing applications.
Monolithic microwave integrated circuits (MMICs) requiring low parasitic capacitance and high thermal conductivity.
| Chemical Type | Gallium Nitride (GaN), carbon-doped |
| Product Form | Freestanding circular wafer (100 mm / 4-inch diameter) |
| Crystal Orientation | C-plane (0001), Si-face polished both sides |
| Thickness | 450 ± 25 µm |
| Surface Finish | Chemomechanically polished, epi-ready (Ra < 0.2 nm) |
| Primary Applications | RF power devices, power electronics, UV optoelectronics |
| Key Features | Low threading dislocation density, high thermal conductivity (~230 W/m·K), lattice-matched to GaN epilayers |
| Regulatory Compliance | RoHS 2015/863/EU compliant; REACH SVHC-free; no conflict minerals used |
| Common Compatible Systems | Suitability |
| Aixtron Crius II MOCVD System | Highly Recommended – Optimized temperature ramp profiles and NH₃ flow compatibility for GaN nucleation |
| Veeco Gen10 MBE Platform | Recommended – Verified Ga/N flux stability and in-situ reflection high-energy electron diffraction (RHEED) calibration |
| Applied Materials Centura® Clustertool | Suitable – Compatible with standard 100 mm wafer handling and vacuum load-lock protocols |
| ASML PAS 5500/300 Stepper | Recommended – Minimal thermal drift during exposure; supports sub-200 nm lithography alignment |
Q1: Does GaN-FS-C-SI-C100 have a CAS Registry Number?
A: Gallium nitride (GaN) is an inorganic crystalline compound not assigned a unique CAS number; however, the bulk material complies with IUPAC nomenclature and is referenced under CAS 25617-97-4 (gallium nitride, unspecified form). This substrate contains no organic ligands or solvents.
Q2: What is the recommended maximum operating temperature for device fabrication using this substrate?
A: Continuous thermal exposure up to 1050 °C is supported during MOCVD growth; short-term spikes ≤ 1100 °C are permissible with controlled ramp rates (< 5 °C/s) to prevent cracking or interfacial decomposition.
Q3: How does GaN-FS-C-SI-C100 compare to sapphire or SiC substrates in terms of lattice mismatch and thermal management?
A: Compared to sapphire (13% lattice mismatch, 35 W/m·K thermal conductivity) and SiC (3.5% mismatch, 490 W/m·K), GaN-FS-C-SI-C100 offers zero lattice mismatch and ~230 W/m·K conductivity—enabling higher power density and lower junction temperatures without buffer layers.
Q4: Are there any known extractables or leachables from this substrate under standard etch or cleaning conditions (e.g., HCl, KOH, or SC1)?
A: No detectable Ga or N ion leaching occurs under standard semiconductor cleaning protocols (SC1: NH₄OH/H₂O₂/H₂O; SC2: HCl/H₂O₂/H₂O; or dilute HCl at 25–60 °C). Surface carbon dopant remains substitutional and non-mobile below 800 °C.
Q5: Is this substrate certified for use in medical-grade or aviation-qualified electronic assemblies?
A: The substrate itself is not a finished component and does not carry ISO 13485 or DO-160 certification; however, it meets raw material traceability and particulate cleanliness requirements (SEMI F57-0219) for inclusion in AS9100- and ISO 13485-certified manufacturing flows.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
Have a Questions? Call Us:
Add:
Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
