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Single-crystal gallium antimonide (GaSb) wafers with high structural uniformity and low dislocation density (< 5 × 10⁴ cm⁻²).
Available in standard diameters (2", 3", 4") and customizable thicknesses (350–500 µm), polished on both sides with epi-ready surface finish (Ra < 0.3 nm).
Native p-type conductivity with tunable carrier concentration (1 × 10¹⁷ – 5 × 10¹⁸ cm⁻³) via controlled doping (e.g., Te, Si, or Be).
Excellent lattice match to critical infrared materials including InAs, InGaAsSb, and AlGaAsSb—enabling high-quality heteroepitaxial growth.
Thermally stable up to 500 °C in inert or reducing atmospheres, supporting MBE and MOCVD integration without substrate degradation.
Mid-infrared (2–12 µm) photodetectors and focal plane arrays for spectroscopy and thermal imaging.
Heterostructure emitters and lasers operating in the 2–4 µm range for gas sensing (e.g., CO, CH₄, NOₓ) and medical diagnostics.
High-electron-mobility transistors (HEMTs) and resonant tunneling diodes (RTDs) for high-speed and low-power electronics.
Substrate for epitaxial growth of type-II superlattices (e.g., InAs/GaSb) used in next-generation infrared optoelectronics.
Platform for monolithic integration of photonic and electronic components in compact IR photonic integrated circuits (PICs).
| Chemical Type | Gallium Antimonide (GaSb), III–V compound semiconductor |
| Product Form | Polished single-crystal wafer (double-side polished, epi-ready) |
| Crystal Orientation | (100) ± 0.5°, with optional (111)A/B orientation |
| Standard Diameters | 50.8 mm (2"), 76.2 mm (3"), 100 mm (4") |
| Thickness Tolerance | ±10 µm (typical for 350–500 µm nominal thickness) |
| Surface Finish | Front: epi-ready CMP polish (Ra < 0.3 nm); Back: etched or ground |
| Primary Applications | Infrared optoelectronics, heteroepitaxy, high-speed devices, IR sensing platforms |
| Regulatory Compliance | RoHS-compliant; no intentional addition of REACH SVHC substances |
| Common Compatible Systems | Suitability |
| MBE (Molecular Beam Epitaxy) systems (e.g., Riber, Veeco) | Highly Recommended – Optimized for low-temperature growth and minimal Sb desorption |
| MOCVD (Metalorganic Chemical Vapor Deposition) reactors (e.g., Aixtron, Thomas Swan) | Recommended – Requires precise control of H₂ carrier flow and precursor ratios to maintain stoichiometry |
| Wafer bonding platforms (e.g., EVG 850, SUSS MicroTec) | Suitable – Compatible with direct, adhesive, and oxide-mediated bonding processes at ≤300 °C |
| Atomic Layer Etching (ALE) and ICP-RIE tools | Highly Recommended – Exhibits high selectivity and smooth etch profiles with Cl₂/CH₄/H₂ chemistries |
Q1: What is the CAS Registry Number for GaSb?
A: The CAS number for gallium antimonide is 12064-03-8.
Q2: Is GaSb wafer substrate suitable for high-temperature processing in air?
A: No — GaSb oxidizes readily above 200 °C in ambient air; processing must be performed under vacuum, N₂, or forming gas (N₂/H₂) to prevent surface degradation and Sb loss.
Q3: How does GaSb compare to InAs or InSb substrates for mid-IR applications?
A: GaSb offers superior mechanical strength and lower vapor pressure than InSb, and better lattice matching to ternary quaternary alloys (e.g., InGaAsSb) than InAs—making it preferred for strain-engineered long-wavelength detectors and lasers.
Q4: Are there any known leaching or elemental migration concerns when GaSb wafers contact aqueous solutions during cleaning?
A: Yes — GaSb is susceptible to hydrolysis in water and acidic/basic solutions; standard cleaning uses only anhydrous solvents (e.g., acetone, IPA, trichloroethylene) followed by oxygen plasma or dilute HCl:H₂O₂:H₂O (1:1:5) rinse with immediate N₂ dry.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
