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Ultra-high purity germanium (99.9999% min) with low dislocation density for optimal epitaxial growth.
Single-crystal Czochralski (CZ) or float-zone (FZ) grown wafers, available in (100), (111), and (110) orientations.
Controlled surface finish options: polished (both sides), etched, or epitaxial-ready with atomic-level flatness (Ra < 0.2 nm).
Thermal expansion coefficient closely matched to III–V compound semiconductors (e.g., GaAs, InP), minimizing interfacial stress.
High electron and hole mobility enables high-frequency and low-power optoelectronic device performance.
Heteroepitaxial growth of GaSb, InSb, and PbTe-based infrared (IR) photodetectors and thermal imaging sensors.
Active layer substrate for mid-wave and long-wave infrared (MWIR/LWIR) focal plane arrays (FPAs) in defense and aerospace systems.
Platform for monolithic integration of Si photonics with Ge-on-Si waveguides and photodetectors.
Base material for high-efficiency multi-junction solar cells in space-grade photovoltaic modules.
Substrate for quantum dot and 2D material (e.g., MoS₂, graphene) transfer and heterostructure characterization.
| Chemical Type | Elemental Germanium (Ge) |
| Product Form | Polished single-crystal wafer (standard diameters: 50 mm, 76.2 mm, 100 mm; thickness: 300–600 µm) |
| Appearance | Silvery-gray, metallic luster; mirror-finish surfaces free of pits, scratches, or haze |
| Melting Point | 938.25 °C |
| Primary Applications | Infrared optics, epitaxial growth, photodetectors, high-speed electronics |
| Key Features | Low intrinsic carrier concentration (2.4 × 10¹³ cm⁻³ at 300 K), high refractive index (~4.0 at 2 µm) |
| Benefits | Enables broadband IR transmission (2–14 µm), excellent thermal conductivity (60 W/m·K), radiation-hardened performance |
| Regulatory Compliance | RoHS-compliant; REACH SVHC-free; no conflict minerals used in crystal growth or polishing |
| Common Compatible Systems | Suitability |
| Molecular Beam Epitaxy (MBE) Systems | Highly Recommended – Optimized for ultra-high vacuum (UHV) compatibility and low-temperature nucleation of III–V layers |
| Metalorganic Chemical Vapor Deposition (MOCVD) | Highly Recommended – Supports uniform growth of GeSn, InGaAs, and Sb-based alloys with minimal autodoping |
| Atomic Layer Deposition (ALD) Platforms | Recommended – Compatible with low-temperature ALD of Al₂O₃, HfO₂, and TiN for passivation and gate stacks |
| Photolithography & Etching Tools (e.g., ICP-RIE) | Suitable – Responds well to Cl₂/Br₂-based chemistries with smooth anisotropic etch profiles |
Q1: What is the CAS Registry Number for elemental germanium substrate?
A: The CAS number for elemental germanium is 7440-56-4. This applies to high-purity Ge substrates used in semiconductor and optical applications.
Q2: Is Ge substrate suitable for direct contact with biological or aqueous media in sensor applications?
A: Elemental Ge is not inherently biocompatible or corrosion-resistant in aqueous environments. For such use, it must be fully encapsulated with inert dielectric layers (e.g., SiNₓ or Al₂O₃) to prevent oxidation and ion leaching.
Q3: How does Ge substrate compare to Si and GaAs for mid-IR detector applications?
A: Ge offers broader IR transparency (up to 14 µm vs. Si’s 8 µm limit) and higher absorption coefficient than Si in 3–5 µm range; unlike GaAs, it requires no lattice-matching buffer for many IR absorbers due to its flexible bonding interface.
Q4: Are there migration or extraction concerns under EU food contact or medical device regulations?
A: Ge substrates are not intended for direct food or bodily fluid contact. When used in certified devices (e.g., IR spectrometers), they remain hermetically sealed; no leachable germanium species are released under standard operating conditions per ISO 10993-12 and EC No. 10/2011 testing protocols.
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