Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Gold Etchant

GoldEtchant™PreciseEtchSeriesGE-200isahigh-purity,acid-basedetchingsolutiondesignedforcontrolledremovalofgoldlayersonPCBs,semiconductors,andmicroelectronics.Itdeliversconsistentetchrates,excellentselectivityoverresistsandunderlayers,andminimalroughness.MadeinISO-certifiedfacilitieswithstrictQC,itensuresrepeatabilityandprocessstabilityacrossbatchproduction.
  • gold etchant_bf017d63
  • gold etchant_bf017d63

Features Of Gold Etchant

  1. Precisely controlled etch rate for high-resolution gold patterning on microelectronic substrates.

  2. Non-cyanide, iodine-based formulation ensuring improved workplace safety and reduced environmental hazard.

  3. Excellent selectivity over common masking layers including photoresist, nickel, chromium, and titanium.

  4. Stable at room temperature with extended shelf life (>12 months unopened under recommended storage).

  5. Low metal ion contamination profile, meeting stringent requirements for semiconductor and MEMS fabrication.

Typical Applications Of Gold Etchant

  1. Fabrication of RF/microwave components and high-frequency interconnects in advanced packaging.

  2. Microstructuring of gold electrodes in biosensors, lab-on-chip devices, and electrochemical platforms.

  3. Pattern definition in flexible printed electronics and transparent conductive film manufacturing.

  4. Release etching and trimming of gold traces during MEMS device post-processing.

  5. Repair and rework of fine-pitch gold circuitry in aerospace and defense-grade PCB assemblies.

Specifications Of Gold Etchant



Chemical TypeIodine–potassium iodide (I₂–KI) aqueous solution
Product FormLiquid concentrate (ready-to-dilute)
AppearanceClear to pale amber liquid; no sediment or cloudiness
pH (1:10 dilution)6.8 – 7.4 (neutral to slightly alkaline)
Primary ApplicationsWet etching of thin-film gold (10 nm – 5 µm) on Si, SiO₂, glass, and polymer substrates
Key FeaturesNon-oxidizing, low-corrosion to underlying adhesion layers (e.g., Ti, Cr, NiV)
BenefitsConsistent uniformity, minimal undercut (<0.5 µm), compatible with automated dispensing systems
Regulatory ComplianceREACH compliant; RoHS 2015/863 Annex II conformant; SDS available per GHS Rev. 10


Compatible Systems Of Gold Etchant

Common Compatible SystemsSuitability
Standard photolithography process lines (manual & semi-automated)Highly Recommended – Fully compatible with spin-coaters, spray developers, and immersion etch tanks
Wafer-level batch processing tools (e.g., Modutek, Technics)Recommended – Requires minor parameter tuning for flow rate and dwell time
Desktop microfluidic etching stations (e.g., SSEC, VCT)Suitable – Validated for use with precision syringe pumps and PTFE fluidic paths
Ultrasonic cleaning & etch integration systemsSuitable – Effective under low-power ultrasonication (≤40 kHz, <100 W); avoid prolonged exposure

Gold Etchant – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for Gold Etchant?

A: The primary active system is registered under CAS No. 7553-56-2 (Iodine) and 7681-11-0 (Potassium Iodide); full formulation is proprietary and assigned internal product ID GE-2024-01.


Q2: What is the recommended working concentration and typical etch rate?

A: Dilute 1 part concentrate with 9 parts deionized water (1:10 v/v) for standard use; etch rate ranges from 15–30 nm/s at 22 °C on 200 nm Au/Ti films, adjustable via temperature and agitation control.


Q3: How does this Gold Etchant compare to traditional cyanide-based etchants?

A: Unlike cyanide etchants, this formulation eliminates acute toxicity risks, simplifies wastewater treatment, and avoids passivation issues—while delivering comparable resolution and edge acuity for sub-micron features.


Q4: Is Gold Etchant certified for use in medical device manufacturing?

A: Yes — it meets ISO 10993-12 extractables testing requirements for short-term contact devices; full biocompatibility documentation and CoA are provided upon order confirmation.


Q5: Does Gold Etchant cause metal migration or ion extraction in multi-layer stacks?

A: No significant migration observed under standard process conditions; validated via TOF-SIMS and EDX analysis on Au/Ni/Cu/SiO₂/Si stacks — residual iodide levels remain below 5 ppm after DI rinse and N₂ dry.



Get in Touch with ERICW
Let competitive chemical materials go global.

Your Name *

Your Email *

Your Phone

Country

Your Message *