SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process

Features Of SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process

1. Ultra-low additive concentration enables exceptional superfilling performance with minimal void formation in sub-45 nm dual-damascene trenches and vias.

2. Proprietary suppressor and accelerator chemistry delivers robust process window stability across variable current densities (1–10 mA/cm²) and wafer geometries.

3. Formulated for compatibility with standard SPM (sulfuric acid–peroxide mixture) and dilute SC-1 cleaning, minimizing post-plating residue and interfacial defects.

4. Reduced copper ion depletion rate extends bath life beyond 5 MAF (metal addition factor) under continuous replenishment control.

5. Non-cyanide, sulfate-based electrolyte system compliant with semiconductor fab environmental health & safety (EHS) requirements.

Typical Applications Of SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process

1. Front-end-of-line (FEOL) copper interconnect metallization for logic and memory ICs at 7 nm to 28 nm technology nodes.

2. Advanced packaging applications including fan-out wafer-level packaging (FOWLP) redistribution layer (RDL) copper plating.

3. High-bandwidth memory (HBM) stack interposer via filling with aspect ratios >8:1.

4. RF and millimeter-wave SoC interconnects requiring low-resistivity, high-purity copper films (<0.18 µΩ·cm).

5. Chiplet integration platforms where uniform step coverage and low surface roughness (<1.2 nm RMS) are critical.

Specifications Of SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process

Compatible Systems Of SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process

SYS-2300 Chip-Level Copper Interconnect Electroplating Solution Damascene Process – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for SYS-2300?

A: SYS-2300 is a proprietary multi-component formulation; individual CAS numbers are assigned only to disclosed non-confidential constituents per SDS Section 3. Full formulation CAS is not assigned per industry practice for trade-secret electroplating chemistries.

Q2: What is the typical working concentration and replenishment rate during production?

A: Diluted working bath: 20–25 mL/L SYS-2300 concentrate in deionized water + 50–60 g/L CuSO₄·5H₂O + 50–60 mL/L H₂SO₄ (96%). Replenishment: 1.2–1.8 mL/L per 100 C/L of charge passed, controlled via CV or amperometric titration.

Q3: How does SYS-2300 compare to legacy copper plating chemistries in terms of migration risk under bias-temperature stress?

A: SYS-2300 exhibits <5% copper migration after 1000 h at 125°C/3 V bias (tested per JEDEC JESD22-A108), significantly lower than conventional PEG/Cl⁻-based systems due to its stabilized suppressor adsorption layer and reduced chloride content (<10 ppm).

Q4: Is SYS-2300 certified for use in ISO 14644-1 Class 1 cleanrooms?

A: Yes — SYS-2300 is manufactured and filtered to ≤0.05 µm particle count (per IEST-G-CC1002) and validated for Class 1 (ISO 3) compatibility when handled using Class 1-certified dispensing systems and nitrogen-purged storage.