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High-resolution positive-tone photoresist optimized for deep UV (248 nm) lithography.
Excellent thermal stability and post-exposure bake (PEB) latitude for robust process control.
Superior adhesion to silicon, SiO₂, and metal substrates without additional primers.
Low outgassing profile suitable for vacuum-compatible and EUV-adjacent process environments.
Consistent film-forming capability with spin-coating across 100–300 nm thickness range.
Front-end-of-line (FEOL) gate patterning in advanced CMOS logic devices.
MEMS sensor fabrication requiring high aspect-ratio resist profiles.
Power semiconductor device manufacturing (e.g., IGBTs, SiC MOSFETs).
Advanced packaging lithography including fan-out wafer-level packaging (FOWLP).
R&D applications in nanoimprint and hybrid lithography workflows.
| Chemical Type | Novolac resin-based positive photoresist with diazonaphthoquinone (DNQ) sensitizer |
| Product Form | Liquid concentrate (ready-to-use), supplied in sealed amber HDPE bottles |
| Appearance | Clear, pale yellow to amber homogeneous solution |
| Viscosity (25°C) | 2.8–3.2 cP (as supplied) |
| Solid Content | 17.5–18.5 wt% |
| Primary Applications | 248 nm DUV lithography, mask aligner and stepper processes |
| Key Features | High photospeed (~25 mJ/cm² at 248 nm), low standing wave effect, high contrast (γ > 5.5) |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500/300 Series Steppers | Highly Recommended – Validated for full-field exposure and automated track integration |
| Karlsruhe Institute of Technology (KIT) Mask Aligner MA-6 | Recommended – Requires minor focus adjustment; compatible with standard soft/hard bake modules |
| TOK Clean Track ACT 12 Lithography System | Highly Recommended – Fully qualified with integrated dispense, bake, and develop modules |
| Canon FPA-3030i4a Stepper | Suitable – Functional performance confirmed; process window characterization recommended per lot |
Q1: What is the CAS Registry Number for HD-4100 Photoresist?
A: HD-4100 is a proprietary multi-component formulation; individual CAS numbers are assigned to key constituents (e.g., novolac resin: CAS 9003-35-4; DNQ: CAS 84-49-1). Full composition disclosure requires signed CDA.
Q2: What is the typical consumption rate per 200 mm wafer at 200 nm film thickness?
A: Approx. 1.8–2.2 mL per 200 mm wafer using standard spin-coating parameters (3000 rpm, 30 s); actual usage varies with substrate topography and edge-bead removal settings.
Q3: How does HD-4100 compare to HD-3200 in terms of resolution and process latitude?
A: HD-4100 delivers higher resolution (≤ 180 nm L/S vs. ≥ 220 nm for HD-3200) and wider PEB latitude (± 2.5°C vs. ± 1.0°C), achieved via optimized DNQ loading and resin molecular weight distribution.
Q4: Is HD-4100 certified for use in medical device manufacturing under ISO 10993 or USP Class VI?
A: HD-4100 is not classified as a finished medical device material; it is intended for semiconductor fabrication only. Residual resist removal and substrate cleaning must comply with ISO 10993-12 extraction protocols prior to biocompatibility testing of final devices.
Q5: Has migration or leaching of HD-4100 components been evaluated under accelerated aging conditions (e.g., 85°C/85% RH)?
A: Migration studies were conducted on fully cured films on Si wafers per JEDEC JESD22-A101; no detectable leachables (< 0.1 ppb) observed after 1000 h at 85°C/85% RH when analyzed by LC-MS/MS.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
