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Single-crystal indium phosphide (InP) wafers with high structural uniformity and low dislocation density (< 1 × 10⁴ cm⁻²).
Available in standard diameters (50 mm, 76.2 mm, 100 mm) and thicknesses (350 µm ± 25 µm), polished on both sides (SSP/ DSP) with epi-ready surface finish.
Controlled crystallographic orientation (e.g., (100) ± 0.5°) and precise off-cut angles for optimized heteroepitaxial growth.
High purity (>99.9999% or 6N) with trace metal impurities below detection limits (ICP-MS), ensuring minimal carrier compensation.
Thermally stable up to 600 °C in inert atmospheres, supporting high-temperature MOCVD and MBE processing.
Epitaxial growth of high-speed optoelectronic devices including laser diodes (DFB, VCSEL), photodetectors, and modulators.
Fabrication of high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for RF/microwave communication systems.
Platform for integrated photonic circuits (PICs) operating in the 1.3–1.55 µm telecom wavelength bands.
Substrate for quantum cascade lasers (QCLs) and mid-infrared (MIR) sensing applications.
Base material for wafer bonding processes in advanced 3D integration and hybrid silicon photonics platforms.
| Chemical Type | Indium Phosphide (InP), single-crystal semiconductor |
| Product Form | Polished round wafer (SSP: single-side polished; DSP: double-side polished) |
| Crystal Orientation | (100) ± 0.5°, with optional off-cut (e.g., 2° toward [110]) |
| Diameter Tolerance | ±0.2 mm |
| Thickness | 350 µm ± 25 µm (standard); custom thicknesses available upon request |
| Surface Roughness (Ra) | < 0.3 nm (on polished side, measured by AFM) |
| Resistivity Range | 0.001–10 Ω·cm (available in semi-insulating, n-type, and p-type variants) |
| Primary Applications | Optoelectronics, high-frequency electronics, photonic integrated circuits |
| Common Compatible Systems | Suitability |
| MOCVD Reactors (e.g., AIXTRON G3, Thomas Swan CCS) | Highly Recommended – Optimized for InP-based epitaxy with precise temperature and V/III ratio control |
| MBE Systems (e.g., Riber, SVT Associates) | Highly Recommended – Compatible with standard In and P effusion cells and reflection high-energy electron diffraction (RHEED) monitoring |
| Photolithography Track & Stepper (e.g., Canon FPA-3030i5a, ASML PAS 5500) | Recommended – Standard alignment marks and thermal expansion profile support sub-micron patterning |
| Wafer Bonding Tools (e.g., EVG 850, SUSS MicroTec SB6 | Suitable – Compatible with direct, anodic, and adhesive bonding processes under controlled ambient conditions |
Q1: Does InP wafer substrate have a CAS Registry Number?
A: Yes — Indium phosphide has CAS No. 22398-80-7. Note that this number applies to the bulk compound; individual wafers are physical forms and not assigned separate CAS numbers.
Q2: What is the typical usage guidance for InP wafers in epitaxial growth?
A: Wafers are used as starting substrates without chemical consumption; standard practice includes pre-growth in-situ bake (450–550 °C, 10–30 min under PH₃ or AsH₃ overpressure) to remove native oxides prior to epitaxy.
Q3: How does InP compare to GaAs and Si substrates for high-speed photonics?
A: InP offers superior direct bandgap (1.35 eV at 300 K), high electron velocity, and lattice-matching to key telecom-active layers (e.g., InGaAsP), enabling monolithic integration of lasers, modulators, and detectors — unlike Si (indirect gap) or GaAs (lattice-mismatched to 1.55 µm materials).
Q4: Are InP wafers compliant with RoHS and REACH regulations?
A: Yes — InP wafers contain no intentionally added Annex XIV substances or RoHS-restricted elements (Pb, Cd, Hg, Cr⁶⁺, PBB, PBDE). Full compliance documentation (including IMDS and SDS) is provided per batch.
Q5: Is there risk of indium or phosphorus migration during device processing or operation?
A: Under standard semiconductor fabrication conditions (dry etching, annealing ≤600 °C, passivation), In and P migration is negligible. No significant leaching occurs in aqueous environments unless exposed to strong acids/bases; wafer integrity remains intact during packaging and operational lifetime.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
