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High electro-optic coefficient enabling precise, low-voltage phase modulation in visible to near-infrared wavelengths.
Exceptional optical transparency (>95% transmittance) across 400–1100 nm spectral range.
Thermally stable thin-film architecture with robust adhesion to glass, silicon, and ITO-coated substrates.
Uniform thickness control (±2 nm tolerance) via scalable spin-coating or slot-die deposition processes.
Low intrinsic optical scattering (<0.1 dB/cm at 633 nm), supporting high-fidelity wavefront manipulation.
Tunable metasurface lenses and beam-steering elements for AR/VR microdisplays.
Integrated photonic modulators in silicon photonics platforms for datacom and sensing.
Adaptive optics components in ophthalmic imaging systems and laser microscopy.
Electro-optic shutter arrays for high-speed machine vision and industrial inspection.
Miniaturized interferometric sensors for real-time strain and temperature monitoring.
| Chemical Type | Lead-based relaxor ferroelectric (Pb(Mg1/3Nb2/3)O3–PbTiO3) |
| Product Form | Sol-gel derived optical film on rigid or flexible transparent substrates |
| Appearance | Colorless, homogeneous, non-crystalline (amorphous-to-nanocrystalline) thin film |
| Thickness Range | 100 nm – 2.5 µm (customizable per application) |
| Refractive Index (633 nm) | 2.25 ± 0.03 (measured by ellipsometry) |
| Primary Applications | Electro-optic modulation, adaptive optics, tunable filters, integrated photonics |
| Key Features | High r33 (>100 pm/V), low dielectric loss (tan δ < 0.02 at 1 kHz), ambient-stable polarization |
| Regulatory Compliance | RoHS-compliant formulation; lead content managed per EU Directive 2011/65/EU Annex III exemptions (Category 8 & 9) |
| Common Compatible Systems | Suitability |
| Silicon-on-Insulator (SOI) photonics platforms | Highly Recommended – Demonstrated monolithic integration with low propagation loss (<0.5 dB/mm) |
| ITO-coated fused silica or BK7 substrates | Highly Recommended – Excellent interfacial adhesion and uniform poling response |
| Polymer waveguide stacks (e.g., SU-8, PMMA) | Recommended – Requires optimized surface plasma treatment for interlayer compatibility |
| Glass-based MEMS optical shutters | Suitable – Compatible with standard flip-chip bonding and hermetic packaging processes |
Q1: What is the CAS Registry Number for PMN-PT Optical Film?
A: PMN-PT is a solid-solution material system without a single CAS number; constituent precursors include Pb(Mg1/3Nb2/3)O3 (CAS 12033-74-4) and PbTiO3 (CAS 12060-01-4). Final film composition is reported as a batch-specific Certificate of Analysis.
Q2: What is the recommended coating thickness for high-speed electro-optic modulation?
A: For sub-ns switching in telecom-band modulators, 300–600 nm thickness is optimal—balancing drive voltage efficiency, optical confinement, and RC-limited bandwidth.
Q3: How does PMN-PT Optical Film compare to LiNbO3 thin films in terms of poling stability and process integration?
A: Unlike stoichiometric LiNbO3, PMN-PT films require no high-temperature annealing or electric-field poling post-deposition; they exhibit intrinsic polar order and maintain stable domain alignment under continuous bias up to 150 °C.
Q4: Are there migration or leaching concerns when used in optical biosensors contacting aqueous media?
A: Fully densified PMN-PT films show negligible lead leaching (<0.05 ppb in PBS buffer, 72 h, 37 °C, per ASTM D6888); optional SiO2 capping layer available for extended aqueous exposure.
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E-mail: wangxingqiang@ericwchem.com
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