KEY-208 Wafer Dicing Cleaning Agent

Features Of KEY-208 Wafer Dicing Cleaning Agent

1. Ultra-low residue formulation designed for post-dicing removal of polymer-based sawing tapes, dicing gel, and particulate debris without leaving ionic or organic contaminants.

2. Non-corrosive to copper, aluminum, low-k dielectrics, and silicon nitride—ensures compatibility with advanced packaging and 3D IC structures.

3. pH-neutral (6.8–7.2) aqueous solution enabling safe integration into inline spray-rinse and megasonic cleaning systems without process drift.

4. Free of halogens, heavy metals, and NMP—fully compliant with SEMI S2/S14 and RoHS 3 directives.

5. Stable across storage temperatures from 5 °C to 40 °C; no phase separation or precipitation observed after 12 months under recommended conditions.

Typical Applications Of KEY-208 Wafer Dicing Cleaning Agent

1. Cleaning of silicon, SiC, GaN, and compound semiconductor wafers after mechanical dicing with diamond blades or plasma dicing.

2. Removal of UV-curable dicing tapes (e.g., Nitto DFT series) and temporary bonding adhesives prior to wafer debonding.

3. Post-thinning cleaning for TSV (Through-Silicon Via) and fan-out wafer-level packaging (FOWLP) substrates.

4. In-line cleaning in batch and single-wafer tools including SCREEN, Tokyo Electron (TEL), and Lam Research platforms.

5. Final rinse step before metrology inspection, probe testing, or die attach to ensure zero particle re-deposition.

Specifications Of KEY-208 Wafer Dicing Cleaning Agent

Compatible Systems Of KEY-208 Wafer Dicing Cleaning Agent

KEY-208 Wafer Dicing Cleaning Agent – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for KEY-208?

A: KEY-208 is a proprietary multi-component formulation; individual CAS numbers are confidential per trade secret protection. Full ingredient disclosure is available under NDA via Material Disclosure Statement (MDS-208).

Q2: What is the recommended concentration and dwell time for optimal cleaning performance?

A: Use undiluted (100%) KEY-208 in spray-rinse mode (2–5 sec dwell) or 1:1 dilution with DI water for immersion (60–90 sec at 25 °C). Higher concentrations do not improve efficacy and may increase rinse burden.

Q3: How does KEY-208 compare to solvent-based alternatives like acetone or PGMEA?

A: Unlike flammable solvents, KEY-208 eliminates explosion risk, VOC reporting, and special ventilation requirements. It achieves comparable tape residue removal while reducing metal ion leaching by >90% versus aggressive solvents on Cu/Al metallization.

Q4: Does KEY-208 meet USP <87> and <88> biological reactivity requirements for medical device wafer processing?

A: Yes—KEY-208 has passed USP <87> cytotoxicity screening and USP <88> intracutaneous reactivity testing (Class I) per ISO 10993-5/-10. Certificate of Conformance available upon request.

Q5: Is there any risk of extractables or leachables when using KEY-208 on polyimide or BCB passivation layers?

A: No measurable extractables were detected (<0.1 ppm) in GC-MS and ICP-MS analysis of KEY-208 contact solutions with polyimide (PI-2611) and BCB (Cyclotene® 4024) films after 120 sec exposure at 30 °C.